Simulating access lines

ABSTRACT

Examples of the present disclosure provide apparatuses and methods for simulating access lines in a memory. An example method can include receiving a first bit-vector and a second bit-vector in a format associated with storing the first bit-vector in memory cells coupled to a first access line and a first number of sense lines and storing the second bit-vector in memory cells coupled to a second access line and the first number of sense lines. The method can include storing the first bit-vector in a number of memory cells coupled to the first access line and a second number of sense lines and storing the second bit-vector in a number of memory cells coupled to the first access line and a third number of sense lines, wherein a quantity of the first number of sense lines is less than a quantity of the second and third number of sense lines.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.15/645,238, filed Jul. 10, 2017, which issues as U.S. Pat. No. 9,990,966on Jun. 5, 2018, which is a Continuation of U.S. application Ser. No.15/179,338, filed Jun. 10, 2016, which issued as U.S. Pat. No. 9,704,541on Jul. 11, 2017, which claims the benefit of U.S. ProvisionalApplication No. 62/174,996, filed Jun. 12, 2015, the contents of whichare included herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memoryapparatuses and methods, and more particularly, to apparatuses andmethods related to simulating access lines in memory.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic systems. There aremany different types of memory including volatile and non-volatilememory. Volatile memory can require power to maintain its data (e.g.,host data, error data, etc.) and includes random access memory (RAM),dynamic random access memory (DRAM), static random access memory (SRAM),synchronous dynamic random access memory (SDRAM), and thyristor randomaccess memory (TRAM), among others. Non-volatile memory can providepersistent data by retaining stored data when not powered and caninclude NAND flash memory, NOR flash memory, and resistance variablememory such as phase change random access memory (PCRAM), resistiverandom access memory (RRAM), and magnetoresistive random access memory(MRAM), such as spin torque transfer random access memory (STT RAM),among others.

Electronic systems often include a number of processing resources (e.g.,one or more processors), which may retrieve and execute instructions andstore the results of the executed instructions to a suitable location. Aprocessor can comprise a number of functional units (e.g., hereinreferred to as functional unit circuitry (FUC)) such as arithmetic logicunit (ALU) circuitry, floating point unit (FPU) circuitry, and/or acombinatorial logic block, for example, which can execute instructionsto perform logical operations such as AND, OR, NOT, NAND, NOR, and XORlogical operations on data (e.g., one or more operands).

A number of components in an electronic system may be involved inproviding instructions to the functional unit circuitry for execution.The instructions may be generated, for instance, by a processingresource such as a controller and/or host processor. Data (e.g., theoperands on which the instructions will be executed to perform thelogical operations) may be stored in a memory array that is accessibleby the FUC. The instructions and/or data may be retrieved from thememory array and sequenced and/or buffered before the FUC begins toexecute instructions on the data. Furthermore, as different types ofoperations may be executed in one or multiple clock cycles through theFUC, intermediate results of the operations and/or data may also besequenced and/or buffered.

In many instances, the processing resources (e.g., processor and/orassociated FUC) may be external to the memory array, and data can beaccessed (e.g., via a bus between the processing resources and thememory array) to execute instructions. Data can be moved from the memoryarray to registers external to the memory array via a bus.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem including a memory device in accordance with a number ofembodiments of the present disclosure.

FIG. 2A illustrates a schematic diagram of a portion of a memory arrayin accordance with a number of embodiments of the present disclosure.

FIG. 2B illustrates a schematic diagram of a portion of sensingcircuitry in accordance with a number of embodiments of the presentdisclosure.

FIG. 3 illustrates a schematic diagram of a portion of a memory array inaccordance with a number of embodiments of the present disclosure.

FIG. 4A-4B illustrate tables showing a simulated memory array and aphysical memory array in accordance with a number of embodiments of thepresent disclosure.

FIGS. 5A-5B illustrate a schematic diagram of a portion of a controllerin accordance with a number of embodiments of the present disclosure.

FIGS. 6A-6D illustrate timing diagrams associated with performing anumber of logical operations using sensing circuitry in accordance witha number of embodiments of the present disclosure.

FIGS. 7A-7B illustrate timing diagrams associated with performing anumber of logical operations using sensing circuitry in accordance witha number of embodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods related tosimulating access lines in memory. Access lines can be simulated byreceiving a first bit-vector and a second bit-vector in a formatassociated with storing the first bit-vector in memory cells coupled toa first access line and a first number of sense lines and storing thesecond bit-vector in memory cells coupled to a second access line andthe first number of sense lines. The method can include storing thefirst bit-vector in a number of memory cells coupled to the first accessline and a second number of sense lines and storing the secondbit-vector in a number of memory cells coupled to the first access lineand a third number of sense lines, wherein a quantity of the firstnumber of sense lines is less than a quantity of the second and thethird number of sense lines. A quantity of the first number of senselines can be less than a quantity of the second and the third number ofsense lines. The method can also include performing an operation on thefirst bit-vector and the second bit-vector.

A memory device can comprise one or more banks, each of which is anarray of sense lines and access lines (which may be referred to hereinas word lines or select lines). Each sense line can be coupled to aplurality of sense amplifiers and/or compute components. A memory arraycan be used to perform a number of operations. A speed associated withperforming a number of operations in a memory array can be based on aquantity of sense lines in the memory array. A memory size of the memoryarray and/or memory device can be based on a quantity of access linesand a quantity of sense lines.

Simulated hardware is implemented using physical hardware. A memoryarray with a first quantity of sense lines and first quantity of accesslines can simulate a memory array with a second quantity of sense linesand a second quantity of access lines, the first quantity of sense linesbeing greater than the second quantity of sense lines and the secondquantity of access lines being greater than the first quantity of accesslines. For example, a simulated memory array with 612 sense lines and1024 access lines can be simulated (e.g., emulated) using a physicalmemory array with 1024 sense lines and 612 access lines. As used herein,the term physical is used to differentiate hardware from simulatedhardware. As such, a physical access line is a non-simulated accessline. As used herein, simulating a memory array can include simulating anumber of sense lines and access lines that compose the simulated memoryarray.

A first type of operation can be executed on a first memory array withmore sense lines and fewer access lines than a second memory array. Asecond type of operation can be executed on a second memory array withfewer sense lines and more access lines than the first memory array. Itmay be desirable to use a memory array to execute both types ofoperations. For example, a first memory array with more sense lines andfewer access lines than a second memory array can be used to executeboth types of operations by simulating the second memory array using thefirst memory array.

Simulating the second memory array using the first memory array withmore sense lines and fewer access lines than the second memory arrayprovides the ability to perform both types of operations efficiently. Ina number of examples, performing a number of operations on a simulatedsecond memory array using the first memory array with more sense linesand fewer access lines than the simulated second memory array can befaster than performing the number of operations on a non-simulatedsecond memory array with fewer sense lines and more access lines thanthe first memory array because the first memory array has more senselines than the non-simulated second memory array.

A simulated second memory array with more access lines and fewer senselines can be emulated by a first memory array with more sense lines andfewer access lines than a second memory array if the quantity of senselines in the first memory array is greater than the quantity of senselines in the second memory array and if the quantity of access lines inthe first memory array is less than the quantity of access lines in thesecond memory array. A memory array with a first quantity of sense linesand a first quantity of access lines can emulate a simulated memoryarray with a second quantity of sense lines and a second quantity ofaccess lines if a product of the first quantity of sense lines and thefirst quantity of access lines is at least a product of the secondquantity of sense lines and the second quantity of access lines. In anumber of examples, a portion of the sense lines and/or a portion of theaccess lines of a physical memory array can be used to emulate asimulated array that is comprised of simulated sense lines and simulatedaccess lines provided that the product of the portion of sense lines andthe portion of the access lines of the physical array is equal to theproduct of the number of simulated sense lines and the number ofsimulated access lines of the simulated array.

A number of embodiments of the present disclosure can provide areduction of the number of computations and/or time involved inperforming operations in a simulated array using a physical memoryarray. For instance, the number of computations and/or the time can bereduced due to an ability to perform various portions of the number ofoperations in parallel (e.g., simultaneously). Performing a number ofoperations as described herein can also reduce power consumption ascompared to previous approaches. In accordance with a number ofembodiments, an operation can be performed on a simulated memory arrayusing a physical memory array without transferring data out of thememory array and/or sensing circuitry via a bus (e.g., data bus, addressbus, control bus, etc.). An operation can involve performing a number ofoperations (e.g., AND operations, OR operations, SHIFT operations,INVERT operations, and an any-bit-set testing operation, referred toherein as a Block_OR operation, etc.). The Block_OR operation candetermine whether a particular bit is stored within a number of memorycells, for example, whether a “1” bit is stored in any memory cell of agroup of memory cells (such as memory cells 303-0 to 303-J in array 330of FIG. 3 described below). However, embodiments are not limited tothese examples of operations.

In various previous approaches, performing an operation on a bit-vectorcan include transferring the bit-vector from the array and sensingcircuitry to a number of registers via a bus comprising input/output(I/O) lines. The number of registers can be used by a processingresource such as a processor, microprocessor, and/or compute engine,which may comprise ALU circuitry and/or other functional unit circuitryconfigured to perform the appropriate logical operations. However, oftenonly a single operation can be performed by the ALU circuitry, andtransferring data to/from memory from/to registers via a bus can involvesignificant power consumption and time requirements. Even if theprocessing resource is located on a same chip as the memory array,significant power can be consumed in moving data out of the array to thecompute circuitry (e.g., ALU). For example, moving the data from thememory array to the processing resource can include performing a senseline address access (e.g., firing of a column decode signal) in order totransfer data from sense lines onto I/O lines, moving the data to thearray periphery, and providing the data to a register in associationwith performing an operation, for instance.

Furthermore, the circuitry of the processing resource(s) (e.g., computeengine) may not conform to pitch rules associated with a memory array.For example, the cells of a memory array may have a 4F² or 6F² cellsize, where “F” is a feature size corresponding to the cells. As such,the devices (e.g., logic gates) associated with ALU circuitry ofprevious PIM systems may not be capable of being formed on pitch withthe memory cells, which can affect chip size and/or memory density, forexample.

For example, the sensing circuitry 150 described herein can be formed ona same pitch as a pair of complementary sense lines. As an example, apair of complementary memory cells may have a cell size with a 6F² pitch(e.g., 3F×2F). If the pitch of a pair of complementary sense lines forthe complementary memory cells is 3F, then the sensing circuitry beingon pitch indicates the sensing circuitry (e.g., a sense amplifier andcorresponding compute component per respective pair of complementarysense lines) is formed to fit within the 3F pitch of the complementarysense lines. In the following detailed description of the presentdisclosure, reference is made to the accompanying drawings that form apart hereof, and in which is shown by way of illustration how one ormore embodiments of the disclosure may be practiced. These embodimentsare described in sufficient detail to enable those of ordinary skill inthe art to practice the embodiments of this disclosure, and it is to beunderstood that other embodiments may be utilized and that process,electrical, and/or structural changes may be made without departing fromthe scope of the present disclosure. As used herein, the designators“S,” “T,” “U,” “V,” “W,” etc., particularly with respect to referencenumerals in the drawings, indicates that a number of the particularfeature so designated can be included. As used herein, “a number of” aparticular thing can refer to one or more of such things (e.g., a numberof memory arrays can refer to one or more memory arrays).

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 231 may referenceelement “31” in FIG. 2, and a similar element may be referenced as 331in FIG. 3. As will be appreciated, elements shown in the variousembodiments herein can be added, exchanged, and/or eliminated so as toprovide a number of additional embodiments of the present disclosure. Inaddition, as will be appreciated, the proportion and the relative scaleof the elements provided in the figures are intended to illustratecertain embodiments of the present invention, and should not be taken ina limiting sense.

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem 100 including a memory device 120 in accordance with a number ofembodiments of the present disclosure. As used herein, a memory device120, a memory array 130, and/or sensing circuitry 150 might also beseparately considered an “apparatus.”

System 100 includes a host 110 coupled to memory device 120, whichincludes a memory array 130. Host 110 can be a host system such as apersonal laptop computer, a desktop computer, a digital camera, a mobiletelephone, or a memory card reader, among various other types of hosts.Host 110 can include a system motherboard and/or backplane and caninclude a number of processing resources (e.g., one or more processors,microprocessors, or some other type of controlling circuitry). Thesystem 100 can include separate integrated circuits or both the host 110and the memory device 120 can be on the same integrated circuit. Thesystem 100 can be, for instance, a server system and/or a highperformance computing (HPC) system and/or a portion thereof. Althoughthe example shown in FIG. 1 illustrates a system having a Von Neumannarchitecture, embodiments of the present disclosure can be implementedin non-Von Neumann architectures (e.g., a Turing machine), which may notinclude one or more components (e.g., CPU, ALU, etc.) often associatedwith a Von Neumann architecture.

For clarity, the system 100 has been simplified to focus on featureswith particular relevance to the present disclosure. The memory array130 can be a DRAM array, SRAM array, STT RAM array, PCRAM array, TRAMarray, RRAM array, NAND flash array, and/or NOR flash array, forinstance. The array 130 can comprise memory cells arranged in rowscoupled by access lines and columns coupled by sense lines (which may bereferred to herein as digit lines or data lines). Although a singlearray 130 is shown in FIG. 1, embodiments are not so limited. Forinstance, memory device 120 may include a number of arrays 130 (e.g., anumber of banks of DRAM cells). An example DRAM array is described inassociation with FIGS. 2 and 3.

The memory device 120 includes address circuitry 142 to latch addresssignals provided over an I/O bus 156 (e.g., a data bus) through I/Ocircuitry 144. Address signals are received and decoded by a row decoder146 and a column decoder 152 to access the memory array 130. Data can beread from memory array 130 by sensing voltage and/or current changes onthe sense lines using sensing circuitry 150. The sensing circuitry 150can read and latch a page (e.g., row) of data from the memory array 130.The I/O circuitry 144 can be used for bi-directional data communicationwith host 110 over the I/O bus 156. The write circuitry 148 is used towrite data to the memory array 130.

Control circuitry 140 (e.g., memory controller) decodes signals providedby control bus 154 from the host 110. These signals can include chipenable signals, write enable signals, and address latch signals that areused to control operations performed on the memory array 130, includingdata read, data write, and data erase operations. In variousembodiments, the control circuitry 140 is responsible for executinginstructions from the host 110. The control circuitry 140 can be a statemachine, a sequencer, or some other type of controller.

An example of the sensing circuitry 150 is described further below inassociation with FIGS. 2A and 2B. For instance, in a number ofembodiments, the sensing circuitry 150 can comprise a number of senseamplifiers and a number of compute components, each of which maycomprise a latch serving as an accumulator and can be used to performlogical operations (e.g., on data associated with complementary senselines). In a number of embodiments, the sensing circuitry (e.g., 150)can be used to perform operations using data stored in a simulated arrayusing physical array 130 as inputs and store the results of theoperations back to the array 130 without transferring via a sense lineaddress access (e.g., without firing a column decode signal). As such,operations can be performed using sensing circuitry 150 rather thanand/or in addition to being performed by processing resources externalto the sensing circuitry 150 (e.g., by a processor associated with host110 and/or other processing circuitry, such as ALU circuitry, located ondevice 120 (e.g., on control circuitry 140 or elsewhere)).

In various previous approaches, data associated with an operation, forinstance, would be read from memory via sensing circuitry and providedto an external ALU. The external ALU circuitry would perform theoperations using bit-vectors (which may be referred to as operands orinputs) and the result could be transferred back to the array via thelocal I/O lines. In contrast, in a number of embodiments of the presentdisclosure, sensing circuitry (e.g., 150) is configured to perform anoperation on data stored in memory cells in memory array 130 thatemulate a simulated memory array and store the result back to the array130 without enabling a local I/O line coupled to the sensing circuitry.

As such, in a number of embodiments, registers and/or an ALU external toarray 130 and sensing circuitry 150 may not be needed to perform theoperation as the sensing circuitry 150 can be operated to perform theappropriate computations involved in performing the operation using theaddress space of memory array 130 that emulates a simulated array.Additionally, the operation can be performed without the use of anexternal processing resource.

FIG. 2A illustrates a schematic diagram of a portion of a memory array230 in accordance with a number of embodiments of the presentdisclosure. A memory cell (e.g., one of memory cells 201-1, 201-2,201-3, 201-4, 201-5, 201-6) comprises a storage element (e.g., one ofcorresponding capacitors 203-1 to 203-6) and an access device (e.g., oneof corresponding transistors 202-1 to 202-6). For instance, memory cell201-3 comprises transistor 202-3 and capacitor 203-3 memory cell 201-4comprises transistor 202-4 and capacitor 203-4, memory cell 201-3comprises transistor 202-3 and capacitor 203-3, and memory cell 201-4comprises transistor 202-4 and capacitor 203-4, etc. In this example,the memory array 230 is a DRAM array of 1T1C (one transistor onecapacitor) memory cells. In a number of embodiments, the memory cellsmay be destructive read memory cells (e.g., reading the data stored inthe cell destroys the data such that the data originally stored in thecell is refreshed after being read). The cells of the memory array 230are arranged in rows coupled by word lines 204-X (Row X), 204-Y (Row Y),etc., and columns coupled by pairs of complementary data linesDIGIT(n−1)/DIGIT(n−1)_, DIGIT(n)/DIGIT(n)_, DIGIT(n+1)/DIGIT(n+1)_. Theindividual data lines corresponding to each pair of complementary datalines can also be referred to as data lines 205-1 (D) and 205-2 (D_)respectively. Although only three pairs of complementary data lines areshown in FIG. 2A, embodiments of the present disclosure are not solimited, and an array of memory cells can include additional columns ofmemory cells and/or data lines (e.g., 4,096, 8,192, 16,384, etc.).

Memory cells can be coupled to different data lines and/or word lines.For example, a first source/drain region of a transistor 202-3 can becoupled to data line 205-1 (D), a second source/drain region oftransistor 202-3 can be coupled to capacitor 203-3, and a gate of atransistor 202-3 can be coupled to word line 204-Y. A first source/drainregion of a transistor 202-4 can be coupled to data line 205-2 (D_), asecond source/drain region of transistor 202-4 can be coupled tocapacitor 203-4, and a gate of a transistor 202-4 can be coupled to wordline 204-X. The cell plate, as shown in FIG. 2A, can be coupled to eachof capacitors 203-3 and 203-4. The cell plate can be a common node towhich a reference voltage (e.g., ground) can be applied in variousmemory array configurations.

The memory array 230 is coupled to sensing circuitry 250-1, 250-2,250-3, etc., in accordance with a number of embodiments of the presentdisclosure. Sensing circuitry comprises a sense amplifier and a computecomponent corresponding to respective columns of memory cells (e.g.,coupled to respective pairs of complementary data lines). In thisexample, the sensing circuitry 250-1 comprises a sense amplifier 206-1and a compute component 231-1 corresponding to respective columns ofmemory cells (e.g., memory cells 201-1 and 201-2 coupled to respectivepairs of complementary data lines). Sensing circuitry 250-2 comprises asense amplifier 206-2 and a compute component 231-2 corresponding torespective columns of memory cells (e.g., memory cells 201-3 and 201-4coupled to respective pairs of complementary data lines). Sensingcircuitry 250-3 comprises a sense amplifier 206-3 and a computecomponent 231-3 corresponding to respective columns of memory cells(e.g., memory cells 201-5 and 201-6 coupled to respective pairs ofcomplementary data lines). A sense amplifier (e.g., sense amplifier206-1) can comprise a cross coupled latch, which can be referred toherein as a primary latch. The sense amplifier (e.g., sense amplifier206-1) can be configured, for example, as described with respect to FIG.2B.

In the example illustrated in FIG. 2A, the circuitry corresponding tocompute component 231-2 comprises a static latch 264 and an additionalnumber of (e.g., ten) transistors that implement, among other things, adynamic latch. For ease of reference, compute component 231-2 has beenillustrated in an expanded format to describe the functioning of thecompute component. Additional compute components (e.g., computecomponents 231-1 and 231-3) include elements of the expanded format ofcompute component 231-2 but are not illustrated in FIG. 2A. The dynamiclatch and/or static latch 264 of the compute component 231-2 can becollectively referred to herein as a secondary latch, which can serve asan accumulator. As such, the compute component 231-2 can operate asand/or be referred to herein as an accumulator. The compute component231-2 can be coupled to each of the data lines D 205-1 and D_205-2 asshown in FIG. 2A. The transistors of compute component 231-2 can all ben-channel transistors (e.g., NMOS transistors), for example. However,embodiments are not limited to this example.

In this example, data line D 205-1 can be coupled to a firstsource/drain region of transistors 216-1 and 239-1, as well as to afirst source/drain region of load/pass transistor 218-1. Data lineD_205-2 can be coupled to a first source/drain region of transistors216-2 and 239-2, as well as to a first source/drain region of load/passtransistor 218-2.

The gates of load/pass transistor 218-1 and 218-2 can be commonlycoupled to a LOAD control signal, or respectively coupled to aPASSD/PASSDB control signal, as discussed further below. A secondsource/drain region of load/pass transistor 218-1 can be directlycoupled to the gates of transistors 216-1 and 239-2. A secondsource/drain region of load/pass transistor 218-2 can be directlycoupled to the gates of transistors 216-2 and 239-1.

A second source/drain region of transistor 216-1 can be directly coupledto a first source/drain region of pull-down transistor 214-1. A secondsource/drain region of transistor 239-1 can be directly coupled to afirst source/drain region of pull-down transistor 207-1. A secondsource/drain region of transistor 216-2 can be directly coupled to afirst source/drain region of pull-down transistor 214-2. A secondsource/drain region of transistor 239-2 can be directly coupled to afirst source/drain region of pull-down transistor 207-2. A secondsource/drain region of each of pull-down transistors 207-1, 207-2,214-1, and 214-2 can be commonly coupled together to a reference voltage(e.g., ground (GND) 291-1). A gate of pull-down transistor 207-1 can becoupled to an AND control signal line, a gate of pull-down transistor214-1 can be coupled to an ANDinv control signal line 213-1, a gate ofpull-down transistor 214-2 can be coupled to an ORinv control signalline 213-2, and a gate of pull-down transistor 207-2 can be coupled toan OR control signal line.

The gate of transistor 239-1 can be referred to as node S1, and the gateof transistor 239-2 can be referred to as node S2. The circuit shown inFIG. 2A stores accumulator data dynamically on nodes S1 and S2.Activating a LOAD control signal causes load/pass transistors 218-1 and218-2 to conduct, and thereby load complementary data onto nodes S1 andS2. The LOAD control signal can be elevated to a voltage greater thanV_(DD) to pass a full V_(DD) level to S1/S2. However, elevating the LOADcontrol signal to a voltage greater than V_(DD) is optional, andfunctionality of the circuit shown in FIG. 2A is not contingent on theLOAD control signal being elevated to a voltage greater than V_(DD).

The configuration of compute component 231-2 shown in FIG. 2A has thebenefit of balancing the sense amplifier for functionality when thepull-down transistors 207-1, 207-2, 214-1, and 214-2 are conductingbefore the sense amplifier 206-2 is fired (e.g., during pre-seeding ofthe sense amplifier 206-2). As used herein, firing the sense amplifier206-2 refers to enabling the sense amplifier 206-2 to set the primarylatch and subsequently disabling the sense amplifier 206-2 to retain theset primary latch. Performing logical operations after equilibration isdisabled (in the sense amplifier), but before the sense amplifier fires,can save power usage because the latch of the sense amplifier does nothave to be “flipped” using full rail voltages (e.g., V_(DD), GND).

Inverting transistors can pull-down a respective data line in performingcertain logical operations. For example, transistor 216-1 (having a gatecoupled to S2 of the dynamic latch) in series with transistor 214-1(having a gate coupled to an ANDinv control signal line 213-1) can beoperated to pull-down data line 205-1 (D), and transistor 216-2 (havinga gate coupled to S1 of the dynamic latch) in series with transistor214-2 (having a gate coupled to an ORinv control signal line 213-2) canbe operated to pull-down data line 205-2 (D_).

The latch 264 can be controllably enabled by coupling to an activenegative control signal line 212-1 (ACCUMB) and an active positivecontrol signal line 212-2 (ACCUM) rather than be configured to becontinuously enabled by coupling to ground and V_(DD). In variousembodiments, load/pass transistors 208-1 and 208-2 can each have a gatecoupled to one of a LOAD control signal or a PASSD/PASSDB controlsignal.

According to some embodiments, the gates of load/pass transistors 218-1and 218-2 can be commonly coupled to a LOAD control signal. In theconfiguration where the gates of load/pass transistors 218-1 and 218-2are commonly coupled to the LOAD control signal, transistors 218-1 and218-2 can be load transistors.

According to some embodiments, the gate of load/pass transistor 218-1can be coupled to a PASSD control signal, and the gate of load/passtransistor 218-2 can be coupled to a PASSDB control signal. In theconfiguration where the gates of transistors 218-1 and 218-2 arerespectively coupled to one of the PASSD and PASSDB control signals,transistors 218-1 and 218-2 can be pass transistors. Pass transistorscan be operated differently (e.g., at different times and/or underdifferent voltage/current conditions) than load transistors. As such,the configuration of pass transistors can be different than theconfiguration of load transistors. As used herein, configuration isintended to mean size, doping level, and transition type.

Load transistors can be configured (e.g., can be sized, doped, etc.) tohandle loading specifications associated with coupling data lines to thelocal dynamic nodes S1 and S2, for example. Pass transistors, however,can be configured to handle heavier loading associated with couplingdata lines to an adjacent accumulator (e.g., through the adjacentcompute component 231-3 and shift circuitry 223-2 in memory array 230,as shown in FIG. 2A). According to some embodiments, load/passtransistors 218-1 and 218-2 can be configured to accommodate the heavierloading corresponding to a pass transistor but be coupled and operatedas a load transistor. For example, load/pass transistors 218-1 and 218-2configured as pass transistors can also be utilized as load transistors.However, load/pass transistors 218-1 and 218-2 configured as loadtransistors may not be capable of being utilized as pass transistors.

In a number of embodiments, the compute component 231-2, including thelatch 264, can comprise a number of transistors formed on pitch with thetransistors of the corresponding memory cells of an array (e.g., array230 shown in FIG. 2A) to which they are coupled, which may conform to aparticular feature size (e.g., 4F², 6F², etc.). According to variousembodiments, latch 264 includes four transistors 208-1, 208-2, 209-1,and 209-2 coupled to a pair of complementary data lines D 205-1 and D205-2 through load/pass transistors 218-1 and 218-2. However,embodiments are not limited to this configuration. The latch 264 can bea cross coupled latch. For example, the gates of a pair of transistors,such as n-channel transistors (e.g., NMOS transistors) 209-1 and 209-2are cross coupled with the gates of another pair of transistors, such asp-channel transistors (e.g., PMOS transistors) 208-1 and 208-2. Asdescribed further herein, the cross coupled latch 264 can be referred toas a static latch.

The voltages or currents on the respective data lines D and D_(—) can beprovided to the respective latch inputs 217-1 and 217-2 of the crosscoupled latch 264 (e.g., the input of the secondary latch). In thisexample, the latch input 217-1 is coupled to a first source/drain regionof transistors 208-1 and 209-1 as well as to the gates of transistors208-2 and 209-2. Similarly, the latch input 217-2 can be coupled to afirst source/drain region of transistors 208-2 and 209-2 as well as tothe gates of transistors 208-1 and 209-1.

In this example, a second source/drain region of transistor 209-1 and209-2 is commonly coupled to a negative control signal line 212-1 (e.g.,ground (GND) or ACCUMB control signal similar to control signal RnIFshown in FIG. 2B with respect to the primary latch). A secondsource/drain region of transistors 208-1 and 208-2 is commonly coupledto a positive control signal line 212-2 (e.g., V_(DD) or ACCUM controlsignal similar to control signal ACT shown in FIG. 2B with respect tothe primary latch). The positive control signal 212-2 can provide asupply voltage (e.g., V_(DD)) and the negative control signal 212-1 canbe a reference voltage (e.g., ground) to enable the cross coupled latch264. According to some embodiments, the second source/drain region oftransistors 208-1 and 208-2 are commonly coupled directly to the supplyvoltage (e.g., V_(DD)), and the second source/drain region of transistor209-1 and 209-2 are commonly coupled directly to the reference voltage(e.g., ground) so as to continuously enable latch 264.

The enabled cross coupled latch 264 operates to amplify a differentialvoltage between latch input 217-1 (e.g., first common node) and latchinput 217-2 (e.g., second common node) such that latch input 217-1 isdriven to either the activated positive control signal voltage (e.g.,V_(DD)) or the activated negative control signal voltage (e.g., ground),and latch input 217-2 is driven to the other of the activated positivecontrol signal voltage (e.g., V_(DD)) or the activated negative controlsignal voltage (e.g., ground).

As shown in FIG. 2A, the sense amplifier 206-2 and the compute component231-2 can be coupled to the array 230 via shift circuitry 223-2. In someexamples, sensing circuitry 250-2 can include shifting circuitry 223-2and/or sensing circuitry 223-1. In this example, the shift circuitry223-2 comprises a pair of isolation devices (e.g., isolation transistors221-1 and 221-2) coupled to data lines 205-1 (D) and 205-2 (D_),respectively. The isolation transistors 221-1 and 221-2 are coupled to acontrol signal 222 (NORM) that, when activated, enables (e.g., turns on)the isolation transistors 221-1 and 221-2 to couple the correspondingsense amplifier 206-2 and compute component 231-2 to a correspondingcolumn of memory cells (e.g., to a corresponding pair of complementarydata lines 205-1 (D) and 205-2 (D_)). According to various embodiments,conduction of isolation transistors 221-1 and 221-2 can be referred toas a “normal” configuration of the shift circuitry 223-2.

In the example illustrated in FIG. 2A, the shift circuitry 223-2includes another (e.g., a second) pair of isolation devices (e.g.,isolation transistors 221-3 and 221-4) coupled to a complementarycontrol signal 219 (SHIFT), which can be activated, for example, whenNORM is deactivated. The isolation transistors 221-3 and 221-4 can beoperated (e.g., via control signal 219) such that a particular senseamplifier 206-2 and compute component 231-2 are coupled to a differentpair of complementary data lines (e.g., a pair of complementary datalines different than the pair of complementary data lines to whichisolation transistors 221-1 and 221-2 couple the particular senseamplifier 206-2 and compute component 231-2), or can couple a particularsense amplifier 206-2 and compute component 231-2 to another memoryarray (and isolate the particular sense amplifier 206-2 and computecomponent 231-2 from a first memory array). According to variousembodiments, the shift circuitry 223-2 can be arranged as a portion of(e.g., within) the sense amplifier 206-2, for instance.

Although the shift circuitry 223-2 shown in FIG. 2A includes isolationtransistors 221-1 and 221-2 used to couple particular sensing circuitry250-2 (e.g., a particular sense amplifier 206-2 and correspondingcompute component 231-2) to a particular pair of complementary datalines 205-1 (D) and 205-2 (D_) (e.g., DIGIT(n) and DIGIT(n)_) andisolation transistors 221-3 and 221-4 are arranged to couple theparticular sensing circuitry 250-2 to an adjacent pair of complementarydata lines in one particular direction (e.g., adjacent data linesDIGIT(n+1) and DIGIT(n+1)_ shown to the right in FIG. 2A), embodimentsof the present disclosure are not so limited. For instance, shiftcircuitry can include isolation transistors 221-1 and 221-2 used tocouple particular sensing circuitry to a particular pair ofcomplementary data lines (e.g., DIGIT(n) and DIGIT(n)_ and isolationtransistors 221-3 and 221-4 arranged so as to be used to couple theparticular sensing circuitry to an adjacent pair of complementary datalines in another particular direction (e.g., adjacent data linesDIGIT(n−1) and DIGIT(n−1)_ shown to the left in FIG. 2A). Shiftcircuitry 223-1 can include isolation transistors used to coupleparticular sensing circuitry 250-1 to a particular pair of complementarydata lines (e.g., DIGIT(n−1) and DIGIT(n−1)_) and isolation transistorsarranged to couple the particular sensing circuitry 250-1 to an adjacentpair of complementary data lines in one particular direction (e.g.,adjacent data lines DIGIT(n) and DIGIT(n) shown in FIG. 2A). Shiftcircuitry 223-3 can include isolation transistors used to coupleparticular 250-3 to a particular pair of complementary data lines (e.g.,DIGIT(n+1) and DIGIT(n+1)_) and isolation transistors arranged to couplethe particular sensing circuitry 250-3 to an adjacent pair ofcomplementary data lines in one particular direction (e.g., adjacentdata lines DIGIT (n) and DIGIT(n)_ to the left and DIGIT(n+2) andDIGIT(n+2)_ to the right (not shown)).

Embodiments of the present disclosure are not limited to theconfiguration of shift circuitry 223-2 shown in FIG. 2A. For example,determining whether to shift in a particular direction to perform ashift operation is independent of the circuitry implementation. In anumber of embodiments, shift circuitry 223-2 such as that shown in FIG.2A can be operated (e.g., in conjunction with sense amplifiers 206-2 andcompute components 231-2) in association with performing mathematicaloperations such as adding and subtracting operations withouttransferring data out of the sensing circuitry 250-2 via an I/O line(e.g., local I/O line (IO/IO_)), for instance.

Although not shown in FIG. 2A, each column of memory cells can becoupled to a column decode line that can be activated to transfer, vialocal I/O line (e.g., I/O line 334 in FIG. 3), a data value from acorresponding sense amplifier 206-2 and/or compute component 231-2 to acontrol component external to the array such as an external processingresource (e.g., host processor and/or other functional unit circuitry).The column decode line can be coupled to a column decoder. However, asdescribed herein, in a number of embodiments, data need not betransferred via such I/O lines to perform logical operations inaccordance with embodiments of the present disclosure. In a number ofembodiments, shift circuitry 223-2 can be operated in conjunction withsense amplifiers 206-2 and compute components 231-2 to perform logicaloperations without transferring data to a control component external tothe array, for instance.

The functionality of the sensing circuitry 250-2 of FIG. 2A is describedbelow and summarized in Table 1 below with respect to performing logicaloperations and initially storing a result in the sense amplifier 206-2.Initially storing the result of a particular logical operation in theprimary latch of sense amplifier 206-2 can provide improved versatilityas compared to previous approaches in which the result may initiallyreside in a secondary latch (e.g., accumulator) of a compute component231-2, and then be subsequently transferred to the sense amplifier206-2, for instance.

TABLE 1 Operation Accumulator Sense Amplifier AND Unchanged Result ORUnchanged Result NOT Unchanged Result SHIFT Unchanged Shifted Data

Initially storing the result of a particular operation in the senseamplifier 206-2 (e.g., without having to perform an additional operationto move the result from the compute component 231-2 (e.g., accumulator)to the sense amplifier 206-2) is advantageous because, for instance, theresult can be written to a row (of the array of memory cells) or backinto the accumulator without performing a precharge cycle (e.g., on thecomplementary data lines 205-1 and/or 205-2).

FIG. 2B illustrates a schematic diagram of a portion of sensingcircuitry in accordance with a number of embodiments of the presentdisclosure. According to various embodiments, sense amplifier 206 cancomprise a cross coupled latch. However, embodiments of the senseamplifier 206 are not limited to a cross coupled latch. As an example,the sense amplifier 206 in FIG. 2B can be current-mode sense amplifierand/or single-ended sense amplifier (e.g., sense amplifier coupled toone data line). Also, embodiments of the present disclosure are notlimited to a folded data line architecture.

In a number of embodiments, a sense amplifier (e.g., 206-2) can comprisea number of transistors formed on pitch with the transistors of thecorresponding compute component 231-2 and/or the memory cells of anarray (e.g., 230 shown in FIG. 2A) to which they are coupled, which mayconform to a particular feature size (e.g., 4F², 6F², etc.). Senseamplifier 206-2 comprises a latch 215 including four transistors coupledto a pair of complementary data lines D 205-1 and D_(—) 205-2. The latch215 can be a cross coupled latch. For example, the gates of a pair oftransistors, such as n-channel transistors (e.g., NMOS transistors)227-1 and 227-2 are cross coupled with the gates of another pair oftransistors, such as p-channel transistors (e.g., PMOS transistors)229-1 and 229-2. As described further herein, the latch 215 comprisingtransistors 227-1, 227-2, 229-1, and 229-2 can be referred to as aprimary latch. However, embodiments are not limited to this example.

The voltages or currents on the respective data lines D and D_(—) can beprovided to the respective latch inputs 233-1 and 233-2 of the crosscoupled latch 215 (e.g., the input of the primary latch). In thisexample, the latch input 233-1 is coupled to a first source/drain regionof transistors 227-1 and 229-1 as well as to the gates of transistors227-2 and 229-2. Similarly, the latch input 233-2 can be coupled to afirst source/drain region of transistors 227-2 and 229-2 as well as tothe gates of transistors 227-1 and 229-1. The compute component 231-2,which may be referred to herein as an accumulator, can be coupled tolatch inputs 233-1 and 233-2 of the cross coupled latch 215 as shown;however, embodiments are not limited to the example shown in FIG. 2B.

In this example, a second source/drain region of transistor 227-1 and227-2 is commonly coupled to an active negative control signal 228(RnIF). A second source/drain region of transistors 229-1 and 229-2 iscommonly coupled to an active positive control signal 265 (ACT). The ACTsignal 265 can be a supply voltage (e.g., V_(DD)) and the RnIF signalcan be a reference voltage (e.g., ground). Activating signals 228 and265 enables the cross coupled latch 215.

The enabled cross coupled latch 215 operates to amplify a differentialvoltage between latch input 233-1 (e.g., first common node) and latchinput 233-2 (e.g., second common node) such that latch input 233-1 isdriven to one of the ACT signal voltage and the RnIF signal voltage(e.g., to one of V_(DD) and ground), and latch input 233-2 is driven tothe other of the ACT signal voltage and the RnIF signal voltage.

The sense amplifier 206-2 can also include circuitry configured toequilibrate the data lines D and D_(—) (e.g., in association withpreparing the sense amplifier for a sensing operation). In this example,the equilibration circuitry comprises a transistor 224 having a firstsource/drain region coupled to a first source/drain region of transistor225-1 and data line D 205-1. A second source/drain region of transistor224 can be coupled to a first source/drain region of transistor 225-2and data line D_(—) 205-2. A gate of transistor 224 can be coupled togates of transistors 225-1 and 225-2.

The second source drain regions of transistors 225-1 and 225-2 arecoupled to an equilibration voltage 238 (e.g., V_(DD)/2), which can beequal to V_(DD)/2, where V_(DD) is a supply voltage associated with thearray. The gates of transistors 224, 225-1, and 225-2 can be coupled tocontrol signal 226 (EQ). As such, activating EQ enables the transistors224, 225-1, and 225-2, which effectively shorts data line D to data lineD_(—) such that the data lines D and D_(—) are equilibrated toequilibration voltage V_(DD)/2. According to a number of embodiments ofthe present disclosure, a number of logical operations can be performedusing the sense amplifier 206-2 and compute component 231-2, and theresult can be stored in the sense amplifier and/or compute component.

The sensing circuitry 250-2 (e.g., 250-2 in FIG. 2A) can be operated inseveral modes to perform logical operations, including a first mode inwhich a result of the logical operation is initially stored in the senseamplifier 206-2, and a second mode in which a result of the logicaloperation is initially stored in the compute component 231-2.Additionally with respect to the first operating mode, sensing circuitry250-2 can be operated in both pre-sensing (e.g., sense amplifiers firedbefore logical operation control signal active) and post-sensing (e.g.,sense amplifiers fired after logical operation control signal active)modes with a result of a logical operation being initially stored in thesense amplifier 206-2.

As described further below, the sense amplifier 206-2 can, inconjunction with the compute component 231-2, be operated to performvarious logical operations using data from an array as input. In anumber of embodiments, the result of a logical operation can be storedback to the array without transferring the data via a data line addressaccess (e.g., without firing a column decode signal such that data istransferred to circuitry external to the array and sensing circuitry vialocal I/O lines). As such, a number of embodiments of the presentdisclosure can enable performing various operations (e.g., logicaloperations, mathematical operations, etc.) using less power than variousprevious approaches. Additionally, since a number of embodimentseliminate the need to transfer data across I/O lines in order to performoperations (e.g., between memory and discrete processor), a number ofembodiments can enable an increased parallel processing capability ascompared to previous approaches.

FIG. 3 illustrates a schematic diagram of a portion of a memory array330 in accordance with a number of embodiments of the presentdisclosure. The array 330 includes memory cells (referred to generallyas memory cells 303, and more specifically as 303-0 to 303-J) coupled torows of access lines 304-0, 304-1, 304-2, 304-3, 304-4, 304-5, 304-6, .. . , 304-R and columns of sense lines 305-0, 305-1, 305-2, 305-3,305-4, 305-5, 305-6, 305-7, . . . , 305-S. Memory array 330 is notlimited to a particular number of access lines and/or sense lines, anduse of the terms “rows” and “columns” does not intend a particularphysical structure and/or orientation of the access lines and/or senselines. Although not pictured, each column of memory cells can beassociated with a corresponding pair of complementary sense lines (e.g.,complementary sense lines 205-1 and 205-2 in FIG. 2A).

The columns of memory cells can be coupled to sensing circuitry (e.g.,sensing circuitry 150 shown in FIG. 1). In this example, the sensingcircuitry comprises a number of sense amplifiers 306-0, 306-1, 306-2,306-3, 306-4, 306-5, 306-6, 306-7, . . . , 306-U coupled to therespective sense lines 305-0, 305-1, 305-2, 305-3, 305-4, 305-5, 305-6,305-7, . . . , 305-S. The sense amplifiers 306 are coupled toinput/output (I/O) line 334 (e.g., a local I/O line) via access devices(e.g., transistors) 308-0, 308-1, 308-2, 308-3, 308-4, 308-5, 308-6,308-7, . . . , 308-V. In this example, the sensing circuitry alsocomprises a number of compute components 331-0, 331-1, 331-2, 331-3,331-4, 331-5, 331-6, 331-7, . . . , 331-X coupled to the respectivesense lines and to the respective sense amplifiers 306-0 to 306-U. Thesensing circuitries corresponding to the respective columns can serve asrespective processing units (e.g., 1-bit processing elements), which canfacilitate performing operations (e.g., logical operations), inparallel, on bit-vectors stored in the array 330. Column decode lines310-1 to 310-W are coupled to the gates of transistors 308-1 to 308-V,respectively, and can be selectively activated to transfer data sensedby respective sense amplifiers 306-0 to 306-U and/or stored inrespective compute components 331-0 to 331-X to a secondary senseamplifier 312. In a number of embodiments, the compute components 331can be formed on pitch with the memory cells of their correspondingcolumns and/or with the corresponding sense amplifiers 306.

In a number of embodiments, the sensing circuitry (e.g., computecomponents 331 and sense amplifiers 306) is configured to perform anoperation on bit-vectors stored in array 330 that emulates a simulatedarray. As an example, a first bit-vector can be stored in a first groupof memory cells coupled to a number of sense lines (e.g., a first groupof sense lines from 305-0 to 305-S) and to a number of access lines(e.g., a 304-0 to 304-R), and a second bit-vector can be stored in asecond group of memory cells coupled to a different number of senselines (e.g., a second group of sense lines from 305-0 to 305-S) and thenumber of access lines (e.g., 304-0 to 304-R). The result of theoperation can be stored (e.g., as a bit-vector(s)) in a third group ofmemory cells coupled to the number of access lines (e.g., 304-0 to304-R) and to a different and/or same number of sense lines (e.g., athird group of sense lines from 305-0 to 305-S). For example, the thirdgroup of memory cells can be a same group of memory cells as the firstgroup of memory cells or the second group of memory cells (e.g., aresult of an operation can be written over a currently storedbit-vector).

An example, performing an operation on bit-vectors stored in array 330that emulates a simulated array is described below in association withFIG. 4A-4B, which illustrates tables showing the states of an array(e.g., 330). The example shown in FIG. 4A is associated with performingan operation on a first bit-vector stored in memory cells coupled toaccess lines 304-0 to 304-1 and to sense lines 305-0 to 305-7 and asecond bit-vector stored in memory cells coupled to access lines 304-0to 304-1 and to sense lines 305-0 to 305-7. The memory array emulates asimulated array that stores the first bit-vector in memory cells coupledto a number of simulated access lines and a number of simulated senselines and a second bit-vector in memory cells coupled to the number ofsimulated access lines and the number of simulated sense lines. In theexamples provided in FIGS. 4A and 4B a first bit-vector is representedusing a₀, a₁, a₂, a₃, a second bit-vector is represented using b₀, b₁,b₂, b₃, a third bit-vector is represented using c₀, c₁, c₂, c₃, and afourth bit-vector is represented using d₀, d₁, d₂, d₃. The firstbit-vector, the second bit-vector, the third bit-vector, and the fourthbit-vector are represented by a number of bits a₀-a₃, and b₀-b₃, c₀-c₃,and d₀-d₃, respectively.

In a number of examples, an operation includes performing a number ofAND operations, OR operations, SHIFT operations, INVERT operations, XORoperations, and Block_OR operations. The AND operations, OR operations,SHIFT operations, XOR operations, and INVERT operations can be performedwithout transferring data via an input/output (I/O) line. The number ofAND operations, OR operations, XOR operations, INVERT operations, andSHIFT operations can be performed using sensing circuitry on pitch withthe memory array and with each of a number of columns of complementarysense lines.

FIG. 4A illustrates tables showing a simulated memory array 438 and aphysical memory array 430-A in accordance with a number of embodimentsof the present disclosure. Memory array 430-A includes sense lines405-0, 405-1, 405-2, 405-3, 405-4, 405-5, 405-6, 405-7, (e.g., referredto generally as sense lines 405) that are analogous to sense lines 305in FIG. 3, access lines 404-0, 404-1 (e.g., referred to generally asaccess lines 404) that are analogous to access lines 304, and sensingcircuitry 450-0, 450-1, 450-2, 450-3, 450-4, 450-5, 450-6, 450-7 (e.g.,referred to generally as sensing circuitry 450) that is analogous tosense amplifiers 306 and compute components 331. Simulated array 438includes simulated sense lines 435-0, 435-1, 435-2, 435-3 (e.g.,referred to generally as simulated sense lines 435), simulated accesslines 437-0, 437-1, 437-2, 437-3 (e.g., referred to generally assimulated access lines 437), and simulated sensing circuitry 451-0,451-1, 451-2, 451-3 (e.g., referred to generally as simulated sensingcircuitry 451). Simulated array 438 illustrates a first bit-vector, asecond bit-vector, a third bit-vector, and a fourth bit-vector in aformat that corresponds to a logical organization (e.g., correspondinglogical address locations) in memory cells coupled to the number ofaccess lines 437-0, 437-1, 437-2, 437-3 and to the number of sense lines435-0, 435-1, 435-2, 435-3.

In the examples provided in FIGS. 4A and 4B, the quantity of sense lines405 is a power of two (e.g., 2, 4, 8, 16, . . . ). The quantity ofsimulated sense lines 435 is a power of two. The quantity of accesslines 404 is a power of two. The quantity of simulated access lines 437is a power of two. While this example illustrates using a power of two,embodiments are not so limited. Any number can be used depending on thesetup of the memory array and how the data is stored. In a number ofexamples, an array 430-A with c (e.g., 8) sense lines (e.g., 405) and r(e.g., 2) access lines (e.g., 404) emulates an array with c/2 (e.g., 4)simulated sense lines (e.g., 435) and 2r (e.g., 4) simulated accesslines (437). However, other ratios (e.g., c:c/3 and r:3r) of sense line405 to simulated sense lines 435 and access lines 404 to simulatedaccess lines 437 can be implemented.

Emulating simulated array 438 can include dividing the sense lines 405of the memory array 430-A into a number of equal-sized groups andcombining each of the equal size groups of sense lines 405 into a singlelogical simulated sense line. For example, sense lines 405 can bedivided into four equal groups. The first group of sense lines caninclude sense lines 405-0, 405-1. The second group of sense lines caninclude sense lines 405-2, 405-3. The third group of sense lines caninclude sense lines 405-4, 405-5. The fourth group of sense lines caninclude sense lines 405-6, 405-7. The first group of sense lines can becombined to create a simulated sense line 435-0, the second group ofsense lines can be combined to create a simulated sense line 435-1, thethird group of sense lines can be combined to create a simulated senseline 435-2, the fourth group of sense lines can be combined to create asimulated sense line 435-3. The equal-sized groups of sense lines 405can be divided using control software and/or hardware. As such, thefirst bit-vector to be stored in memory cells coupled to simulatedaccess line 437-0 can be stored in memory cells coupled to access line404-0. The second bit-vector to be stored in memory cells coupled tosimulated access line 437-1 can be stored in memory cells coupled toaccess line 404-0. The third bit-vector to be stored in memory cellscoupled to simulated access line 437-2 can be stored in memory cellscoupled to access line 404-1. The fourth bit-vector to be stored inmemory cells coupled to simulated access line 437-3 can be stored inmemory cells coupled to access line 404-1.

Emulating simulated array 438 can also include mapping simulated accesslines 437 to access lines 404. Each of the simulated access lines 437can be mapped to portions of access lines 404. For example, simulatedaccess line 437-0 maps to a first portion of access line 404-0 that iscoupled to sense lines 405-0, 405-2, 405-4, 405-6, simulated access line437-1 maps to a second portion of access line 404-0 that is coupled tosense lines 405-1, 405-3, 405-5, 405-7, simulated access line 437-2 mapsto a first portion of access line 404-1 that is coupled to sense lines405-0, 405-2, 405-4, 405-6, simulated access line 437-3 maps to a secondportion of access line 404-1 that is coupled to sense lines 405-1,405-3, 405-5, 405-7. For example, memory cells that store a₀, a₁, a₂, a₃in the simulated memory array 437 and are coupled to simulated senselines 435-0, 435-1, 435-2, 435-3 and simulated access line 437-0 can bemapped to memory cells that store a₀, a₁, a₂, a₃ in memory array 430-Aand are coupled to access line 404-0 and sense lines 405-0, 405-2,405-4, 405-6.

As such, a memory array 430-A with access lines 404-0,404-1 can emulatea simulated array 438 with simulated access lines 437-0 to 437-3 eventhough the quantity of access lines 404 is less than the quantity ofsimulated access lines 437. Emulating simulated array 438 using array430-A with a lesser quantity of access lines 404 than simulated accesslines 437 can result in a greater number of sense lines 405 being usedto perform an operation as compared to the number simulated sense lines435.

In FIG. 4A, adjacent sense lines are merged. For instance, sense lines405-0, 405-1 are merged to emulate simulated sense line 435-0, senselines 405-2, 405-3 are merged to emulate simulated sense line 435-1,sense lines 405-4, 405-5 are merged to emulate simulated sense line435-2, sense lines 405-6, 405-7 are merged to emulate simulated senseline 435-3. In FIG. 4B, each of the number of sense lines (e.g., senselines 405-0, 405-1, sense lines 405-4, 405-5) that are merged areseparated by a number of different sense lines (e.g., separated by senselines 405-2, 405-3 and sense lines 405-6, 405-7).

In a number of examples, a number of sense lines whose associated binaryindex differs by a particular digit can be combined. For example, a ksense line can be combined with a k XOR n sense line, where n is a powerof two that depends on the array's physical structure and k is aphysical sense line 405. For example, a first sense line with a decimal0 index (e.g., a binary 000 index) can be combined with a second senseline with a decimal 2 index (e.g., binary 010) to emulate a firstsimulated sense line, where the decimal 2 index (e.g., binary 010) isthe result of 000 XOR 010 (e.g., k=000 and n=010). A third sense linewith a decimal 1 index (e.g., binary 001 index) can be combined with afourth sense line with a decimal 3 index (e.g., binary 011 index) toemulate a second simulated sense line, where the decimal 3 index (e.g.,binary 011 index) is the result of 001 XOR 010 (e.g., k=001 and n=010).A fifth sense line with a decimal 4 index (e.g., binary 100 index) canbe combined with a sixth sense line with a decimal 6 index (e.g., binary110 index) to emulate a third simulated sense line, where the decimal 6index (e.g., binary 110 index) is the result of 100 XOR 010 (e.g., k=100and n=010). A seventh sense line with a decimal 5 index (e.g., binary101 index) can be combined with an eighth sense line with a decimal 7index (e.g., binary 111 index) to emulate a fourth simulated sense line,where the decimal 7 index (e.g., binary 111 index) is the result of 101XOR 010 (e.g., k=101 and n=010). In a number of examples, n can be equalto a power of two that is greater than 2 such as 512, 1024, 4096, 8192,or 16384, among other examples of a power of two. The above example isfurther described in FIG. 4B.

The decision on how to combine sense lines 405 can be based on acommunication topology between the different sense lines 405. Forexample, the decision on how to combine sense lines 405 can be based ona shift circuitry (e.g., shift circuitry 223 in FIG. 2). For example,the shift circuitry 223 shown in FIG. 2 connects adjacent sense lines.However, shift circuitry associated with a memory array can connectnon-adjacent sense lines.

The computation capabilities of the sensing circuitry 450 coupled tosense lines 405 can accelerate the performance of a number of operationsas compared to the performance of the number of operations usingsimulated sensing circuitry 451 that is coupled to simulated sense lines435. For example, performing an OR operation can include performing anOR operation on a first bit-vector “a” (e.g., [a₀, a₁, a₂, a₃]) and asecond bit-vector “b” (e.g., [b₀, b₁, b₂, b₃]) resulting in a bit-vector“e” (e.g., [e₀, e₁, e₂, e₃]), not illustrated, wherein e₀=a₀ OR b₀,e₁=a₁ OR b₁, e₂=a₂ OR b₂, and e₃=a₃ OR b₃. Resulting bit-vector “e” canbe stored from the sensing circuitry back into the array 430-A. Examplesof performing a logical operation (e.g., OR and AND operations, amongother logical operations) are described in FIGS. 6A-7B. In someexamples, it can be beneficial to perform an OR operation on a number ofdifferent portions of bit-vectors. For example, performing a₀ OR b₀ in aphysical array 430 can include storing a₀ in the sensing circuitry 450-0and shifting a₀ from sensing circuitry 450-0 to sensing circuitry 450-1to align b₀ and a₀ in a same sense line 405-1. Performing an ORoperation can also include storing b₀ in the sensing circuitry 450-1 andshifting b₀ from sensing circuitry 450-1 to sensing circuitry 450-0, toalign b₀ and a₀ in a same simulated sense line 405-0. Once aligned, thesensing circuitry 450-0, and/or the sensing circuitry 450-1, can performa₀ OR b₀. In a number of examples, each OR operation is completed beforea subsequent OR operation is performed on a particular one of sensingcircuitry 451. For example, a first OR operation can be completed beforea second OR operation is performed on sensing circuitry 450-0.

In at least one embodiment, an OR operation can be performed onbit-vectors a and d. For example, an OR operation can be performed on afirst bit of each of bit-vectors a and d, along with the second, third,and fourth bits of each of bit-vectors a and d, respectively. Performinga₀ OR d₀ in a physical array 430 can include storing a₀ in the sensingcircuitry 450-0 and shifting a₀ from sensing circuitry 450-0 to sensingcircuitry 450-1 to align d₀ and a₀ in a same sense line 405-1.Performing an OR operation can also include storing d₀ in the sensingcircuitry 450-1 and shifting d₀ from sensing circuitry 450-1 to sensingcircuitry 450-0, to align d₀ and a₀ in a same simulated sense line405-0. Once aligned, the sensing circuitry 450-0 and/or the sensingcircuitry 450-1 can perform a₀ OR d₀. In a number of examples, each ORoperation is completed before a subsequent OR operation is performed ona particular one of sensing circuitry 451. For example, a first ORoperation can be completed before a second OR operation is performed onsensing circuitry 450-0.

In at least one embodiment, an OR operation can be performed onbit-vectors a and c as well as on b and d. For example, an OR operationcan be performed on a first bit of each of bit-vectors a and c, alongwith the second, third, and fourth bits of each of bit-vectors a and c,respectively. In addition, an OR operation can be performed on a firstbit of each of bit-vectors b and, along with the second, third, andfourth bits of each of bit-vectors b and d. Performing a₀ OR c₀ and b₀OR d₀ in memory array 430-A can be faster as compared to performing a₀OR c₀ and b₀ OR d₀ in a physical memory array that is configured assimulated memory array 438 is configured due to the ability to performmultiple OR operations at a same time. For example, a₀ OR c₀ and b₀ ORd₀ can be performed in sensing circuitry 450-0 and 450-1, respectively,in memory array 430-A in parallel or at the same time. In contrast,however, a₀ OR c₀ and b₀ OR d₀ in memory array 438 may not be performedin parallel. For example, a₀ OR c₀ would be performed prior toperforming b₀ OR d₀ as each operation would use sensing circuitry 450-0(which would be configured as sensing circuitry 451-0 in simulated array438) one at a time. As such, performing an operation on portions (e.g.,a first bit of each bit-vector, including a₀, b₀, c₀, and d₀,respectively) of bit-vectors a, b, c, and d in memory array 430-A can befaster than performing the operation on bit-vectors a, b, c, and d insimulated memory array 438 due to the ability to use parallelism inperforming the operations.

An operation can be performed on simulated array 438 by mapping theoperation to an array 430-A and performing the operation on array 430-A.For example, a load operation that stores a bit, that is stored in amemory cell coupled to a simulated access line i (e.g., a simulatedaccess line from simulated access lines 437), in a simulated sensingcircuitry 451 can be mapped to an array 430-A by storing a bit, storedin memory cells coupled to access line └i/2┘, in sensing circuitry 450and shifting the bit by i mod 2 sensing circuitries. The brackets “└ ┐”represent a floor function that designates rounding a value downward tothe largest integer less than or equal to the value. For example, asimulated access line i (e.g., simulated access lines 437) can be mappedto access line └i/2┘.

For example, mapping a load operation performed on the a₀ bit (e.g.,loading the a₀ into simulated sensing circuitry 451-0) that is stored ina memory cell coupled to simulated access line 437-0 and simulated senseline 435-0 in simulated array 438 to physical array 430-A can includemapping simulated access line 437-0 to (e.g., i=0) access line 404-0(e.g., └0/2┘=0). Loading the a₀ bit can include storing the a₀ bit, thatis stored in a memory cell coupled to simulated sense line 435-0 and tosimulated access line 437-0 (e.g., access line i=0), in simulatedsensing circuitry 451-0 by storing the a₀ bit, that is stored in amemory cell coupled to sense line 405-0 and access line 404-0 (e.g.,access line └0/2 ┘=0) in array 430-A to sensing circuitry 450-0 andperforming a shift operation on the a₀ bit to move the a₀ bit zerosensing circuitries (e.g., 0 mod 2=0).

Loading the a₁ bit can include storing the a₁ bit, that is stored in amemory cell coupled to simulated sense line 435-1 and to simulatedaccess line 437-0 (e.g., access line i=0), into simulated sensingcircuitry 451-1 by storing the a₁ bit, that is stored in a memory cellcoupled to sense line 405-2 and access line 404-0 (e.g., access line└0/2 ┘=0) in array 430-A to sensing circuitry 450-2 and performing ashift operation on the a₁ bit to move the a₁ bit zero sensingcircuitries (e.g., 0 mod 2=0).

The b₀ bit that is stored in a memory cell coupled to simulated senseline 435-0 and to simulated access line 437-1 (e.g., access line i=1) insimulated array 438 can be stored in simulated sensing circuitry 451-0by storing the b₀ bit that is stored in a memory cell coupled to senseline 405-1 and access line 404-0 (e.g., access line └1/2┘=0) in array430-A to sensing circuitry 450-1 and shifting the b₀ bit from sensingcircuitry 450-1 to sensing circuitry 450-0. For example, the b₀ bit canbe left shifted one sensing circuitry (e.g., shift by 1 mod 2=1) fromsensing circuitry 450-1 to sensing circuitry 450-0.

The b₁ bit that is stored in a memory cell coupled to simulated senseline 435-1 and to simulated access line 437-1 (e.g., access line i=1) insimulated array 438 can be stored in simulated sensing circuitry 451-1by storing the b₁ bit that is stored in a memory cell coupled to senseline 405-3 and access line 404-0 (e.g., access line └1/2┘=0) in array430-A to sensing circuitry 450-3 and shifting the b₁ bit from sensingcircuitry 450-3 to sensing circuitry 450-2. For example, the b₁ bit canbe left shifted one sensing circuitry (e.g., shift by 1 mod 2=1) fromsensing circuitry 450-3 to sensing circuitry 450-2.

The c₀ bit that is stored in a memory cell coupled to simulated senseline 435-0 and to simulated access line 437-2 (e.g., access line i=2) insimulated array 438 can be stored in simulated sensing circuitry 451-0by storing the c₀ bit that is stored in a memory cell coupled to senseline 405-0 and access line 404-1 (e.g., access line └2/2┘=1) in array430-A to sensing circuitry 450-0 and performing a shift operation tomove the c₀ bit zero sensing circuitries (e.g., 2 mod 2=0).

The c₁ bit that is stored in a memory cell coupled to simulated senseline 435-1 and to simulated access line 437-2 (e.g., access line i=2) insimulated array 438 can be stored in simulated sensing circuitry 451-1by storing the c₁ bit that is stored in a memory cell coupled to senseline 405-2 and access line 404-1 (e.g., access line └2/2┘=0) in array430-A to sensing circuitry 450-2 and performing a shift operation tomove the c₁ bit zero sensing circuitries (e.g., 2 mod 2=0), or, putanother way, not shifting the c₁ bit.

The d₀ bit that is stored in a memory cell coupled to simulated senseline 435-0 and to simulated access line 437-3 (e.g., access line i=3) insimulated array 438 can be stored in simulated sensing circuitry 451-0by storing the d₀ bit that is stored in a memory cell coupled to senseline 405-1 and access line 404-1 (e.g., access line └3/2┘=1) in array430-A to sensing circuitry 450-1 and shifting the d₀ bit from sensingcircuitry 450-1 to sensing circuitry 450-0. For example, the d₀ bit canbe left shifted one sensing circuitry (e.g., shift by 3 mod 2=1) fromsensing circuitry 450-1 to sensing circuitry 450-0.

The d₁ bit that is stored in a memory cell coupled to simulated senseline 435-1 and to simulated access line 437-3 (e.g., access line i=3) insimulated array 438 can be stored in simulated sensing circuitry 451-1by storing the d₁ bit that is stored in a memory cell coupled to senseline 405-3 and access line 404-1 (e.g., access line └3/2┘=0) in array430-A to sensing circuitry 450-3 and shifting the d₁ bit from sensingcircuitry 450-3 to sensing circuitry 450-2. For example, the d₁ bit canbe left shifted one sensing circuitry (e.g., shift by 3 mod 2=1) fromsensing circuitry 450-3 to sensing circuitry 450-2.

A store operation can move a bit from a sensing circuitry to a memorycell in an array. In a number of examples, a bit can be moved from asimulated sensing circuitry 451 to a memory cell to store a result of anoperation performed by simulated sensing circuitry 451. Mapping a storeoperation performed in a simulated array 438 to a store operationperformed in array 430-A can include performing an additional shiftoperation to perform a store operation in array 430-A as compared to astore operation in simulated array 438. Moving (e.g., storing) a bitfrom a simulated sensing circuitry 451 to a memory cell coupled to asimulated sense line 435 and a simulated access line 437 can includeshifting a bit stored in a sensing circuitry 450 by i mod 2 and movingthe shifted bit to a memory cell coupled to access line └i/2┘.

For example, moving the a₀ bit from simulated sensing circuitry 451-0 toa memory cell coupled to simulated sensing line 435-0 and simulatedaccess line 437-0 (e.g., i=0) can include shifting the a₀ bit that isstored in sensing circuitry 450-0 by zero sensing circuitries (e.g., 0mod 2=0) and moving the a₀ bit to a memory cell coupled to access line404-0 (e.g., └0/2┘=0) and sense line 405-0. For example, the a₀ bit isnot left shifted before it is stored in the memory cell coupled toaccess line 404-0.

Moving the a₃ bit from simulated sensing circuitry 451-3 to a memorycell coupled to simulated sensing line 435-3 and simulated access line437-0 (e.g., i=0) can include right shifting the a₃ bit that is storedin sensing circuitry 450-6 zero sensing circuitries (e.g., 0 mod 2=0)and moving the a₃ bit to a memory cell coupled to access line 404-0(e.g., └0/2┘=0) and sense line 405-6.

Moving the d₀ bit from simulated sensing circuitry 451-0 to a memorycell coupled to simulated sensing line 435-0 and simulated access line437-3 (e.g., i=3) can include right shifting the d₀ bit that is storedin sensing circuitry 450-0 one sensing circuitry (e.g., 3 mod 2=1) tosensing circuitry 450-1 and moving the d₀ bit to a memory cell coupledto access line 404-1 (e.g., └3/2┘=1) and sense line 405-1.

A logical operation such as an AND, OR, and/or XOR operation, amongother logical operations, can be mapped to memory array 430-A.Performing a logical operation in simulated memory array 438 can includeperforming an operation on two bits that are stored in a same sensingcircuitry without shifting the bits from one sensing circuitry to adifferent censing circuitry. For example, performing a logical operationon a₀ and b₀ in simulated memory array 438 can include performing thelogical operation on the a₀ bit and the b₀ bit which are stored in thesimulated sensing circuitry 451-0 without shifting the a₀ bit and/or theb₀ bit.

Mapping the logical operation to memory array 430-A can include shifting(e.g., left shift operation) a first bit from a first sensing circuitryto a second sensing circuitry that is i mod 2 sensing circuitries fromthe first sensing circuitry, performing the logical operation on asecond bit stored in a memory cell coupled to a particular access line(e.g., access line └i/2┘) and the shifted first bit in the secondsensing circuitry, and shifting (e.g., right shift operation) the resultbit of the logical operation by i mod 2 sensing circuities to the firstsensing circuitry. The variable i is equal to an index associated withthe simulated access line 437 in which the first bit was originallystored. The first bit can be shifted before performing the logicaloperation to align the first bit with the second bit. The first bit isshifted after performing the logical operation to return the result ofthe logical operation to a sense line that is coupled to a memory cellthat stores the first bit.

For example, ORing a₀ and b₀ in simulated array 438 can be mapped tomemory array 430-A by determining that the b₀ bit is stored in a memorycell coupled to simulated access line 437-1 with an index equal to one(e.g., i=1). Mapping an OR operation can also include left shifting theb₀ bit that is stored in sensing circuitry 450-1 to sensing circuitry450-0 which is one (e.g. 1 mod 2=0) sensing circuitries from sensingcircuitry 450-1. Mapping the OR operation can also include performing anOR operation on a₀ which is stored in a memory cell coupled to accessline 404-0 (e.g., access line └0/2┘=0) and b₀ which is stored in sensingcircuitry 450-0. Mapping the OR operation can also include rightshifting the result bit of the OR operation from sensing circuitry 450-0to sensing circuitry 450-1 which is one (e.g. 1 mod 2=0) sensingcircuitry from sensing circuitry 450-0.

ORing c₃ and d₃ in simulated array 438 can be mapped to memory array430-A by, determining that the d₃ bit was originally stored in a memorycell coupled to simulated access line 437-3 with an index equal to three(e.g., i=3). Mapping an OR operation can also include left shifting theb₃ bit that is stored in sensing circuitry 450-7 to sensing circuitry450-6 which is one (e.g. 3 mod 2=1) sensing circuitries from sensingcircuitry 450-7. Mapping the OR operation can also include performing anOR operation on c₃ which is stored in a memory cell coupled to accessline 404-1 (e.g., access line └3/2┘=1) and d₃ which is stored in sensingcircuitry 450-6. Mapping the OR operation can also include rightshifting the result bit of the OR operation from sensing circuitry 450-6to sensing circuitry 450-7 which is one (e.g. 3 mod 2=1) sensingcircuitry from sensing circuitry 450-6.

A shift operation performed on simulated memory array 438 can be mappedto memory array 430-A based on how the simulated sense lines 435 aremapped to the sense lines 405. If the pairs of adjacent sense lines 405are joined to emulate a single simulated sense line 435 as shown in FIG.4A, then shifting a bit from a first simulated sensing circuitry to asecond simulated sensing circuitry that is n simulated sensingcircuitries from the first simulated sensing circuitry can be mapped tomemory array 430-A by shifting a bit from a first sensing circuitry to asecond sensing circuitry that is n*j sensing circuitries from the firstsensing circuitry. The variable j can refer to a set distance of senselines between associated bits in different bit-vectors. In a number ofexamples, the shifting circuitry associated with array 430-A can bemodified to accommodate the mapping of sense lines 405 and simulatedsense lines 435. For example, the shift circuitry may not connectadjacent sensing circuitries, but may connect every other adjacentsensing circuitry and/or may employ a different connecting scheme.

Loading, storing, and performing logical operations can include shiftingleft and/or right. Shifting left and/or right is used herein to denoteshifting towards a most significant bit (MSB) and/or a least significantbit (LSB), respectively. However, the meaning of a left shift and/orright shift can change as the placement of the MSB and/or the LSBchanges within a memory array.

In a number of examples, storing data into the memory array 430-A and/orreading data from the memory array 430-A can be based on a mappingbetween the simulated sense lines 435 and the sense lines 405. Forexample, an instruction to store a bit-vector into a simulated senseline in simulated memory array 438 can be received from host 110 atcontroller 140. Controller 140 can distribute the bits from thebit-vector into a number of sense lines 405 that are joined to emulatethe simulated sense line. If a bit-vector is received with instructionsto store the bit-vector in memory cells that are coupled to simulatedsense lines 435-0 to 435-3 and simulated access lines 437-0 to 437-3,then the controller 140 can store the bit-vector in memory cells coupledto sense lines 405-0 to 405-7 and access lines 404-0 to 404-1 as shownin FIG. 4A.

The simulated sense lines 435 can be mapped to sense lines 405. Forexample, simulated sense line 435 with indexes or indices equal to m,m+1, . . . m+3 can be mapped to sense lines 405 with an index equal tom, m+2, . . . , m+6. In FIG. 4A, simulated sense line 435-0 with anindex equal to zero (e.g., m=0) can be mapped to sense line 405-0 withan index equal to zero (e.g., m=0). A simulated sense line 435-1 with anindex equal to one (e.g., m+1=1) can be mapped to sense line 405-2 withan index equal to two (e.g., m+2=2).

Reading a bit-vector from memory cells coupled to a number of senselines in memory array 430-A can include compressing the bits of abit-vector. Compressing the bits of a bit-vector can include reading anumber of portions of the bit-vector and combining the number ofportions of the bit-vector into a single bit-vector. For example, thecontroller 140 can read the b bit-vector by reading a first portion(e.g., b₀) of the b bit-vector, a second portion (e.g., b₁) of the bbit-vector, a third portion (e.g., b₂) of the b bit-vector, and a fourthportion (e.g., b₃) of the b bit-vector. The controller 140, can thencombine the first portion, the second portion, the third portion, andthe fourth portion of the b bit-vector to create the b bit-vector (e.g.,b₀, b₁, b₂, b₃). The controller 140 can then provide the b bit-vector toa device that requested the b bit-vector such as host 110.

Although the examples provided in FIGS. 4A and 4B are given with regardto performing operations on a bit and/or on a pair of bits, theoperations can be performed an a number of bits and/or pair of bits froma plurality of bit-vectors in parallel. For example, shifting a firstbit-vector from a simulated sense line 435 to a second simulated senseline 435 can include shifting portions of the first bit-vector that isstored in memory cells coupled to a same access line 404 in parallel.For example, shifting the b bit-vector can include shifting b₀, b₁, b₂,b₃ in parallel from sensing circuitry 450-1, 450-3, 450-5, 450-7, tosensing circuitry 450-0, 450-2, 450-4, 450-6.

In a number of examples, the controller 140 in FIG. 1 can be furtherconfigured to provide separate function control bits for differentportions of the first number of sense line and the second number ofsense lines. For example, the controller 140 can be configured toactivate one and/or a portion of the sense lines 405 without activatingall of the sense lines 405. The controller 140 can activate thedifferent portions of the sense lines independently via the number ofseparate function control bits.

FIG. 4B illustrates tables showing a simulated memory array 438 and aphysical memory array 430-B in accordance with a number of embodimentsof the present disclosure. Memory array 430-B includes sense lines405-0, 405-1, 405-2, 405-3, 405-4, 405-5, 405-6, 405-7 (e.g., referredto generally as sense lines 405) that are analogous to sense lines 405and 305 in FIGS. 3 and 4A, access lines 404-0, 404-1 (e.g., referred togenerally as access lines 404) that are analogous to access lines 304and 404 in FIGS. 3 and 4A respectively, and sensing circuitry 450-0,450-1, 450-2, 450-3, 450-4, 450-5, 450-6, 450-7 (e.g., referred togenerally as sensing circuitry 450) that are analogous to senseamplifiers 306 and compute components 331 in FIG. 3. Simulated array 438includes simulated sense lines 435-0, 435-1, 435-2, 435-3 (e.g.,referred to generally as simulated sense lines 435), simulated accesslines 437-0, 437-1, 437-2, 437-3 (e.g., referred to generally assimulated access lines 437), and simulated sensing circuitry 451-0,451-1, 451-2, 451-3 (e.g., referred to generally as simulated sensingcircuitry 451) which are analogous to simulated sense lines 435,simulated access lines 437, and simulated sensing circuitry 451 in FIG.4A, respectively.

Emulating array 438 can include dividing the sense lines 405 of thememory array 430-B into a number of equal-sized groups and combiningeach of the equal size groups of sense lines 405 into a single logicalsimulated sense line. For example, sense lines 405 can be divided intofour equal groups. The first group of sense lines can include senselines 405-0, 405-2. The second group of sense lines can include senselines 405-1, 405-3. The third group of sense lines can include senselines 405-4, 405-6. The fourth group of sense lines can include senselines 405-5, 405-7.

The first group of sense lines can be combined to create a simulatedsense line 435-0. The second group of sense lines can be combined tocreate a simulated sense line 435-1. The third group of sense lines canbe combined to create a simulated sense line 435-2. The fourth group ofsense lines can be combined to create a simulated sense line 435-3.

The equal-sized groups of sense lines 405 can be divided using controlsoftware and/or hardware. As such, bits to be stored in memory cellscoupled to simulated sense line 435-0 can be stored in memory cellscoupled to sense lines 405-0, 405-2, bits to be stored in memory cellscoupled to simulated sense line 435-1 can be stored in memory cellscoupled to sense lines 405-1, 405-3, bits to be stored in memory cellscoupled to simulated sense line 435-2 can be stored in memory cellscoupled to sense lines 405-4, 405-6, and bits to be stored in memorycells coupled to simulated sense line 435-3 can be stored in memorycells coupled to sense lines 405-5, 405-7.

Emulating array 438 can also include mapping simulated access lines 437to access lines 404. Each of the simulated access lines 437 can bemapped to portions of access lines 404. For example, simulated accessline 437-0 maps to a first portion of access line 404-0 that is coupledto sense lines 405-0, 405-1, 405-4, 405-5, simulated access line 437-1maps to a second portion of access line 404-0 that is coupled to senselines 405-2, 405-3, 405-6, 405-7, simulated access line 437-2 maps to afirst portion of access line 404-1 that is coupled to sense lines 405-0,405-1, 405-4, 405-5, and simulated access line 437-3 maps to a secondportion of access line 404-1 that is coupled to sense lines 405-2,405-3, 405-6, 405-7. For example, memory cells that store a₀ and a₁ inthe simulated memory array 437 and are coupled to simulated sense lines435-0, 435-1 and simulated access line 437-0 can be mapped to a memorycells that store a₀ and a₁ in memory array 430-B and are coupled toaccess line 404-0 and sense lines 405-0, 405-1.

In FIG. 4B, sense lines separated by one sense line are merged. Forexample, sense lines 405-0 and 405-2 are merged to emulate simulatedsense line 435-0, sense lines 405-1 and 405-3 are merged to emulatesimulated sense line 435-1, sense lines 405-4 and 405-6 are merged toemulate simulated sense line 435-2, and sense line 405-5 and 405-7 aremerged to emulate simulated sense line 435-3.

In a number of examples, storing data into the memory array 430-B and/orreading data from the memory array 430-B can be based on a mappingbetween the simulated sense lines 435 and the sense lines 405. Forexample, an instruction to store a bit-vector into memory cells coupledto a simulated sense line in simulated memory array 438 can be receivedfrom host 110 at controller 140. Controller 140 can distribute the bitsfrom the bit-vector into a number of sense lines 405 that are joined toemulate the simulated sense line.

If a bit-vector is received with instructions to store the bit-vector inmemory cells that are coupled to simulated sense lines 435-0 to 435-3and simulated access line 437-0, then the controller 140 can store thebit-vector in memory cells coupled to sense lines 405-0, 405-1, 405-4,405-5 and access lines 404-0 as shown in FIG. 4B. If a bit-vector isreceived with instructions to store a bit-vector in memory cells thatare coupled to simulated sense lines 435-0 to 435-3 and simulated accesslines 437-1, then the controller 140 can store the bit-vector in memorycells coupled to sense lines 405-2, 405-3, 405-6, 405-7 and access line404-1. If a bit-vector is received with instructions to store thebit-vector in memory cells that are coupled to simulated sense lines435-0 to 435-3 and simulated access line 437-2, then the controller 140can store the bit-vector in memory cells coupled to sense lines 405-0,405-1, 405-4, 405-5 and access line 404-3. If a bit-vector is receivedwith instructions to store the bit-vector in memory cells that arecoupled to simulated sense lines 435-0 to 435-3 and simulated accessline 437-3, then the controller 140 can store the bit-vector in memorycells coupled to sense lines 405-3, 405-3, 405-6, 405-7 and access line404-3.

Storing a bit-vector (e.g., data) into simulated memory array 438 can bemapped into storing the bit-vector into memory array 430-B. Storing thea bit-vector into simulated memory array 438 can include storing the a₀bit in a memory cell coupled to simulated sense line 435-0 and simulatedaccess line 437-0, storing the a₁ bit in a memory cell coupled tosimulated sense line 435-1 and simulated access line 437-0, storing theas bit in a memory cell coupled to simulated sense line 435-2 andsimulated access line 437-0, and storing the a₃ bit in a memory cellcoupled to simulated sense line 435-3 and simulated access line 437-0.

Storing the b bit-vector into simulated memory array 438 can includestoring the b₀ bit in a memory cell coupled to simulated sense line435-0 and simulated access line 437-1, storing the b₁ bit in a memorycell coupled to simulated sense line 435-1 and simulated access line437-1, storing the b₂ bit in a memory cell coupled to simulated senseline 435-2 and simulated access line 437-1, and storing the b₃ bit in amemory cell coupled to simulated sense line 435-3 and simulated accessline 437-1. Storing the c bit-vector into simulated memory array 438 caninclude storing the c₀ bit in a memory cell coupled to simulated senseline 435-0 and simulated access line 437-2, storing the c₁ bit in amemory cell coupled to simulated sense line 435-1 and simulated accessline 437-2, storing the c₂ bit in a memory cell coupled to simulatedsense line 435-2 and simulated access line 437-2, and storing the c₃ bitin a memory cell coupled to simulated sense line 435-3 and simulatedaccess line 437-2. Storing the d bit-vector into simulated memory array438 can include storing the d₀ bit in a memory cell coupled to simulatedsense line 435-0 and simulated access line 437-3, storing the d₁ bit ina memory cell coupled to simulated sense line 435-1 and simulated accessline 437-3, storing the d₂ bit in a memory cell coupled to simulatedsense line 435-2 and simulated access line 437-3, and storing the d₃ bitin a memory cell coupled to simulated sense line 435-3 and simulatedaccess line 437-3.

Storing the a bit-vector into memory array 430-B can include storing thea₀ bit in a memory cell coupled to physical sense line 405-0 and accessline 404-0, storing the a₁ bit in a memory cell coupled to sense line405-1 and access line 404-0, storing the a₂ bit in a memory cell coupledto sense line 405-2 and access line 404-0, and storing the a₃ bit in amemory cell coupled to sense line 405-5 and access line 404-0. Storingthe b bit-vector into memory array 430-B can include storing the b₀ bitin a memory cell coupled to sense line 405-2 and access line 404-0,storing the b₁ bit in a memory cell coupled to sense line 405-3 andaccess line 404-0, storing the b₂ bit in a memory cell coupled to senseline 405-6 and access line 404-0, and storing the b₃ bit in a memorycell coupled to sense line 405-7 and access line 404-0.

Storing the c bit-vector into memory array 430-B can include storing thec₀ bit in a memory cell coupled to sense line 405-0 and access line404-1, storing the c₁ bit in a memory cell coupled to sense line 405-1and access line 404-1, storing the c₂ bit in a memory cell coupled tosense line 405-4 and access line 404-1, and storing the c₃ bit in amemory cell coupled to sense line 405-5 and access line 404-1. Storingthe d bit-vector into memory array 430-B can include storing the d₀ bitin a memory cell coupled to sense line 405-2 and access line 404-1,storing the d₁ bit in a memory cell coupled to sense line 405-3 andaccess line 404-1, storing the d₂ bit in a memory cell coupled to senseline 405-6 and access line 404-1, and storing the d₃ bit in a memorycell coupled to sense line 405-7 and access line 404-1.

The reading of a bit-vector (e.g., data) from the simulated memory array438 can be mapped to a reading of the bit-vector from memory array 438.For example, the controller can read the a₀, a₁, b₀, b₁, a₂, a₃, b₂, andb₃, bits at a same time by moving the a₀, a₁, b₀, b₁, a₂, a₃, b₂, and b₃bits to the sensing circuitry 450 and moving the a₀, a₁, b₀, b₁, a₂, a₃,b₂, and b₃ bits to the controller 140, and by compressing the a₀, a₁ a₂,and a₃, bits into a bit-vector [a₀, a₁, a₂, a₃,], and the b₀, b₁, b₂,and b₃ bits into a bit-vector [b₀, b₁, b₂, b₃]. The controller can alsoread the c₀, c₁, d₀, d₁, c₂, c₃, d₂, and d₃ bits at a same time bymoving the c₀, c₁, d₀, d₁, c₂, c₃, d₂, and d₃ bits to the sensingcircuitry 450 and moving the c₀, c₁, d₀, d₁, c₂, c₃, d₂, and d₃ bits tothe controller 140, and by compressing the c₀, c₁, c₂, and c₃ bits intoa bit-vector [c₀, c₁, c₂, c₃], and the d₀, d₁, d₂, and d₃ bits into abit-vector [d₀, d₁, d₂, d₃]. In a number of examples, the controller canread the a₀, a₁, b₀, b₁, a₂, a₃, b₂, and b₃, bits at a same time bymoving the a₀, a₁, b₀, b₁, a₂, a₃, b₂, and b₃ bits to the sensingcircuitry 450 and moving the a₀, a₁, b₀, b₁, a₂, a₃, b₂, and b₃ bits tothe controller 140. The controller 140 can then isolate any one of thea₀, a₁, b₀, b₁, a₂, a₃, b₂, and b₃ bits. For example, the controller 140can isolate the b₃ bit.

In the example provided in FIG. 4B, a simulated access line 437 i can bemapped to an access line 404-(└i/2┘). A simulated sense line 405 k canbe mapped to a sense line

$405\text{-}{\left( {{4*\left\lfloor \frac{k}{2} \right\rfloor} + {\left( {i\; {mod}\; 2} \right)*2} + \left( {k\; {mod}\; 2} \right)} \right).}$

An operation can be performed on simulated memory array 438 by mappingthe operation to an array 430-B and performing the operation on array430-B. For example, a load operation that stores a bit, that is storedin a memory cell coupled to a simulated access line i (e.g., a simulatedaccess line from simulated access lines 437), in a simulated sensingcircuitry 451 can be mapped to an array 430-B by storing a bit, storedin memory cells coupled to access line └i/2┘, in sensing circuitry 450and shifting the bit to

${4*\left\lfloor \frac{k}{2} \right\rfloor} + {\left( {i\; {mod}\; 2} \right)*2} + \left( {k\; {mod}\; 2} \right)$

sensing circuitry (e.g., sensing circuitry 450).

For example, a load operation to be performed on simulated memory array438 can be mapped to be performed on memory array 430-B. Performing aload operation on a₀, a₁, a₂, and a₃ bits to load the a₀, a₁, a₂, and a₃bits to simulated sensing circuitry 451 can include storing the a₀ bitin simulated sensing circuitry 451-0, the a₁ bit in simulated sensingcircuitry 451-1, the a₂ bit in simulated sensing circuitry 451-2, and/orthe a₃ bit in simulated sensing circuitry 451-3. The load operationperformed on the a₀, a₁, a₂, and a₃ bits to load the bits to simulatedsensing circuitry 451 can be mapped to load the bits to sensingcircuitry 450 in memory array 430-B.

Mapping the load operation to be performed in memory array 430-B caninclude storing the a₀ bit, that is stored in a memory cell coupled tosimulated sense line 435-0 (e.g., simulated sense line k=0) and tosimulated access line 437-0 (e.g., simulated access line i=0), intosimulated sensing circuitry 451-0 by storing the a₀ bit, that is storedin a memory cell coupled to sense line 405-0 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{0}{2} \right\rfloor} + {\left( {0\; {mod}\; 2} \right)*2} + \left( {0\; {mod}\; 2} \right)} = 0} \right)$

and access line 404-0 (e.g., access line └0/2┘=0) in array 430-B intosensing circuitry 450-0 and shifting the a₀ bit to sensing circuitry450-0. For example, the a₀ bit is not shifted. Mapping the loadoperation to be performed in memory array 430-B can include storing thea₁ bit, that is stored in a memory cell coupled to simulated sense line435-1 (e.g., simulated sense line k=1) and to simulated access line437-0 (e.g., simulated access line i=0), into simulated sensingcircuitry 451-1 by storing the b₀ bit, that is stored in a memory cellcoupled to sense line 405-1 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{1}{2} \right\rfloor} + {\left( {0\; {mod}\; 2} \right)*2} + \left( {1\; {mod}\; 2} \right)} = 1} \right)$

and access line 404-0 (e.g., access line └0/2┘=0) in array 430-B tosensing circuitry 450-1 and left shifting the a₁ bit zero (e.g., 2*(0mod 2)=0) sensing circuitries (e.g., not shifting the a₁ bit).

Mapping the load operation to be performed in memory array 430-B caninclude storing the a₂ bit, that is stored in a memory cell coupled tosimulated sense line 435-2 (e.g., simulated sense line k=2) and tosimulated access line 437-0 (e.g., simulated access line i=0), intosimulated sensing circuitry 451-2 by storing the a₂ bit, that is storedin a memory cell coupled to sense line 405-4 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{2}{2} \right\rfloor} + {\left( {0\; {mod}\; 2} \right)*2} + \left( {2\; {mod}\; 2} \right)} = 4} \right)$

and access line 404-0 (e.g., access line └0/2┘=0) in array 430-B tosensing circuitry 450-4 and left shifting the a₂ bit zero (e.g., 2*(0mod 2)=0) sensing circuitries (e.g., not shifted). Mapping the loadoperation to be performed in memory array 430-B can include storing thea₃ bit, that is stored in a memory cell coupled to simulated sense line435-3 (e.g., simulated sense line k=3) and to simulated access line437-0 (e.g., simulated access line i=0), in simulated sensing circuitry451-3 by storing the a₃ bit, that is stored in a memory cell coupled tosense line 405-5 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{3}{2} \right\rfloor} + {\left( {0\; {mod}\; 2} \right)*2} + \left( {3\; {mod}\; 2} \right)} = 5} \right)$

and access line 404-0 (e.g., access line └0/2┘=0) in array 430-B tosensing circuitry 450-5 and left shifting (e.g., 2*(0 mod 2)=0) the a₃bit zero sensing circuitries (e.g., not shifted).

In a number of examples, the load operation can be performed on the b₀,b₁, b₂ and b₃ bits to load the bits into simulated sensing circuitry451. The load operation performed on b₀, b₁, b₂ and b₃ can be mapped toload the bits into sensing circuitry 450 in memory array 430-B.

Mapping the load operation to be performed in memory array 430-B caninclude storing the b₀ bit, that is stored in a memory cell coupled tosimulated sense line 435-0 (e.g., simulated sense line k=0) and tosimulated access line 437-1 (e.g., simulated access line i=1), intosimulated sensing circuitry 451-0 by storing the b₀ bit, that is storedin a memory cell coupled to sense line 405-2 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{0}{2} \right\rfloor} + {\left( {1\; {mod}\; 2} \right)*2} + \left( {0\; {mod}\; 2} \right)} = 2} \right)$

and access line 404-0 (e.g., access line └1/2┘=0) in array 430-B intosensing circuitry 450-2 and left shifting the b₀ bit two (e.g., 2*(1 mod2)=2) sensing circuitries from sensing circuitry 450-2 to sensingcircuitry 450-0. Mapping the load operation to be performed in memoryarray 430-B can include storing the b₁ bit, that is stored in a memorycell coupled to simulated sense line 435-1 (e.g., simulated sense linek=1) and to simulated access line 437-1 (e.g., simulated access linei=1), in simulated sensing circuitry 451-1 by storing the b₁ bit, thatis stored in a memory cell coupled to sense line 405-3 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{1}{2} \right\rfloor} + {\left( {1\; {mod}\; 2} \right)*2} + \left( {1\; {mod}\; 2} \right)} = 3} \right)$

and access line 404-0 (e.g., simulated access line └1/2┘=0) in array430-B, to sensing circuitry 450-3 and left shifting the b₁ bit two(e.g., 2*(1 mod 2)=2) sensing circuitries from sensing circuitry 450-3to sensing circuitry 450-1.

Mapping the load operation to be performed in memory array 430-B caninclude storing the b₂ bit, that is stored in a memory cell coupled tosimulated sense line 435-2 (e.g., simulated sense line k=2) and tosimulated access line 437-1 (e.g., simulated access line i=1), intosimulated sensing circuitry 451-2 by storing the b₂ bit, that is storedin a memory cell coupled to sense line 405-6 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{2}{2} \right\rfloor} + {\left( {1\; {mod}\; 2} \right)*2} + \left( {2\; {mod}\; 2} \right)} = 6} \right)$

and access line 404-0 (e.g., access line └1/2┘=0) in array 430-B tosensing circuitry 450-6 and left shifting the b₂ bit two (e.g., 2*(1 mod2)=2) sensing circuitries from sensing circuitry 450-6 to sensingcircuitry 450-4. Mapping the load operation to be performed in memoryarray 430-B can include storing the b₃ bit, that is stored in a memorycell coupled to simulated sense line 435-3 (e.g., simulated sense linek=3) and to simulated access line 437-1 (e.g., simulated access linei=1), into simulated sensing circuitry 451-3 by storing the b₃ bit, thatis stored in a memory cell coupled to sense line 405-7 (e.g., sense line

$\left. {{{4*\left\lfloor \frac{3}{2} \right\rfloor} + {\left( {1\; {mod}\; 2} \right)*2} + \left( {3\; {mod}\; 2} \right)} = 7} \right)$

and access line 404-0 (e.g., access line └1/2┘=0) in array 430-B intosensing circuitry 450-7 and left shifting the b₃ bit two (e.g., 2*(1 mod2)=2) sensing circuitries from sensing circuitry 450-7 to sensingcircuitry 450-5.

A store operation to be performed in simulated memory array 438 can bemapped to be performed in memory array 430-B. A store operation thatmoves (e.g., stores) a bit from a simulated sensing circuitry 451 to amemory cell coupled to a simulated sense line 435 (e.g., k) and asimulated access line 437 (e.g., i) can include shifting a bit stored ina sensing circuitry 450

${4*\left\lfloor \frac{k}{2} \right\rfloor} + \left( {k\; {mod}\; 2} \right)$

by 2*(i mod 2) sensing circuitries 450 and moving the shifted bit to amemory cell coupled to access line └i/2┘ and sense line

$\left( {{e.g.},{{4*\left\lfloor \frac{k}{2} \right\rfloor} + {\left( {i\; {mod}\; 2} \right)*2} + \left( {k\; {mod}\; 2} \right)}} \right).$

For example, moving the a₀ bit from simulated sensing circuitry 451-0 toa memory cell coupled to simulated sensing line 435-0 (e.g., simulatedsensing line k=0) and simulated access line 437-0 (e.g., simulatedaccess line i=0) can include right shifting the a₀ bit that is stored insensing circuitry 450-0

$\left( {{e.g.},{{{4*\left\lfloor \frac{0}{2} \right\rfloor} + \left( {0\; {mod}\; 2} \right)} = 0}} \right)\mspace{14mu} {by}\mspace{14mu} {zero}\mspace{14mu} \left( {{e.g.},{{2*\left( {0\; {mod}\; 2} \right)} = 0}} \right)$

to sensing circuitry 450-0 (computed from

${4*\left\lfloor \frac{0}{2} \right\rfloor} + {\left( {0\; {mod}\; 2} \right)*2} + \left( {0\; {mod}\; 2} \right)$

and moving the shifted a₀ bit to a memory cell coupled to access line404-0 (e.g., └0/2┘=0) and sense line 405-0

$\left( {{e.g.},{{{4*\left\lfloor \frac{0}{2} \right\rfloor} + {\left( {0\; {mod}\; 2} \right)*2} + \left( {0\; {mod}\; 2} \right)} = 0}} \right).$

Moving the d₂ bit from simulated sensing circuitry 451-2 to a memorycell coupled to simulated sensing line 435-2 (e.g., simulated sensingline k=2) and simulated access line 437-3 (e.g., simulated access linei=3) can include left shifting the d₂ bit that is stored in sensingcircuitry 450-4

$\left( {{e.g.},{{{4*\left\lfloor \frac{2}{2} \right\rfloor} + \left( {2\; {mod}\; 2} \right)} = 4}} \right)$

by two sensing circuitries (e.g., 2*(3 mod 2)=2) to sensing circuitry450-6 (e.g., sensing circuitry

$\left. {{{4*\left\lfloor \frac{2}{2} \right\rfloor} + {\left( {3\; {mod}\; 2} \right)*2} + \left( {2\; {mod}\; 2} \right)} = 6} \right)$

and moving the shifted d₂ bit into a memory cell coupled to access line404-1 (e.g., └3/2┘=2) and sense line 405-6 (e.g., sensing circuitry

$\left. {{{4*\left\lfloor \frac{2}{2} \right\rfloor} + {\left( {3\; {mod}\; 2} \right)*2} + \left( {2\; {mod}\; 2} \right)} = 6} \right).$

Performing a logical operation in simulated memory array 438 can includeperforming the logical operation on the two bits stored in a samesimulated sensing circuitry. For example, performing a logical operationon a₀ and b₀ in simulated memory array 438 can include performing thelogical operation on the a₀ bit and the b₀ bit stored simulated sensingcircuitry 451-0. Furthermore, the result bit stored in the sensingcircuitry 451-0 and/or the different simulated sensing circuitry 451 canbe stored in a memory cell coupled to a simulated sense line (e.g.,simulated sense line 435-0) associated with the sensing circuitry 451-0and/or the different simulated sensing circuitry 451.

Mapping the logical operation to memory array 430-B can include shifting(e.g., left shift operation) a first bit from a first sensing circuitryto a second sensing circuitry that is a number of sensing circuitriesfrom the first sensing circuitry, performing the logical operation on asecond bit stored in a memory cell coupled to a particular access lineand the shifted first bit in the second sensing circuitry, and shifting(e.g., right shift operation) the result bit of the logical operation bythe number of sensing circuitries back to the first sensing circuitry.For example, ORing a₀ and b₀ in simulated array 438 can be mapped toORing a₀ and b₀ in memory array 430-B by determining that the b₀ bit wasoriginally stored in a memory cell coupled to simulated access line437-1 with an index equal to one. Mapping an OR operation can alsoinclude left shifting the b₀ bit that is stored in sensing circuitry450-2 to sensing circuitry 450-0 which is two sensing circuitries fromsensing circuitry 450-0. Mapping the OR operation can also includeperforming an OR operation on a₀ which is stored in a memory cellcoupled to access line 404-0 and b₀ which is stored in sensing circuitry450-0. Mapping the OR operation can also include right shifting theresult bit of the OR operation from sensing circuitry 450-0 to sensingcircuitry 450-2 which is two sensing circuitries from sensing circuitry450-0.

ORing b₃ and c₃ in simulated array 438 can be mapped to ORing b₃ and c₃in memory array 430-B by determining that the b₃ bit was originallystored in a memory cell coupled to simulated access line 437-1. Mappingan OR operation can also include left shifting the b₃ bit that is storedin sensing circuitry 450-7 to sensing circuitry 450-5 which is twosensing circuitries from sensing circuitry 450-5. Mapping the ORoperation can also include performing an OR operation on c₃ which isstored in a memory cell coupled to access line 404-5 and b₃ which isstored in sensing circuitry 450-5. Mapping the OR operation can alsoinclude right shifting the result bit of the OR operation from sensingcircuitry 450-5 to sensing circuitry 450-7 which is two sensingcircuitries from sensing circuitry 450-5.

A shift operation performed on simulated memory array 438 can be mappedto memory array 430-B based on how the simulated sense lines 435 aremapped to the sense lines 405. If non-adjacent pairs of adjacent senselines 405 are joined to emulate a single simulated sense line 435 asshown in FIG. 4B, then shifting a bit from a first simulated sensingcircuitry to a second simulated sensing circuitry that is n simulatedsensing circuitries from the first simulated sensing circuitry can bemapped to memory array 430-B by shifting a bit from a first sensingcircuitry to a second sensing circuitry that is either └n/2┘*4+1 or└n/2┘*4+3 sensing circuitries from the first sensing circuitry, whereinone of the formulas is selected based on whether n is an even or oddnumber.

FIG. 5A illustrates a schematic diagram of a portion of a controller inaccordance with a number of embodiments of the present disclosure. FIG.5A includes array 530, row decoder 546, and sensing circuitry 550, thatare analogous to array 130, row decoder 146, and sensing circuitry 150in FIG. 1. FIG. 5A also includes conditional shift module 580, bitcounter 581-1, comparator 582, modify module 583, select module 585,emulation flag module 586, and wait line 587. The conditional shiftmodule 580, bit counter 581-1, comparator 582, modify module 583, selectmodule 585, emulation flag module 586, and wait line 587 can be used toimplement the example described in association with FIG. 4A.

FIG. 5A shows a schematic diagram for multiplexing a number (n) ofcontinuous physical sense lines into a virtual sense line. For example,four (e.g., n=4) continuous physical sense lines can be multiplexed intoa virtual sense line. The circuitry shown in FIG. 5A can be included incontroller 140 and/or between controller 140 and array 130 in FIG. 1.

The emulation flag module 586 can determine whether the simulated accesslines are being emulated. The emulation flag module 586 can be coupledto the conditional shift module 580, the modify module 583, the selectmodule 585, and the bit counter 581-1. The emulation flag module 586 canactivate (e.g., 1) or deactivate (e.g., 0) an emulation flag to signifywhether a number of simulated access lines are emulated using physicalaccess lines. The emulated flag module 586 can be used to select frommultiple emulation modes such as mappings and/or row emulation rations.

Conditional shift module 580 can receive a simulated access line numberassociated with a particular access line. The conditional shift module580 can also receive a simulation flag that can identify whether accessline and sense line emulation is activated (e.g., turned on). Theconditional shift module 580 can map the simulated access line number toa physical access line number. The conditional shift module 580 can becoupled to the row decoder 546, the select module 585, the comparator582, and/or the emulation flag module 586. The simulated access linenumber received by the conditional shift module 580 can identify asimulated access line and a physical access line on which an operationis performed.

If the emulated access flag is activated, then the simulated access linenumber that identifies a simulated access line can be mapped by theconditional shift module 580 to the physical access line number thatidentifies the physical access line. If the emulated access flag isdeactivated, then the conditional shift module 580 can forward thereceived simulated access line number as a physical access line number.

The conditional shift module 580 can map the simulated access linenumber to the physical access line number by shifting the simulatedaccess line number, for example. In a number of examples, the mappingcan include performing other operations.

The conditional shift module 580 can also provide a number of leastsignificant bits of the simulated access line number to the bit counter581-1 and/or the comparator 582. The quantity of least significant bitsprovided to the bit counter 581-1 and/or the comparator 582 can dependon the mapping employed by the conditional shift module 580.

The bit counter 581-1 can be a two bit counter, a three bit counter, ora counter with a greater number of bits. The bit counter 581-1 can alsobe a ring counter and/or a non-binary counter, among other countertypes. The bit counter 581-1 can be used to map a simulated sensingcircuitry to a physical sensing circuitry. The bit counter 581-1 caninitially be set to zero and can be incremented or decremented based onthe result of the modify module 583 which are represented via a shiftright line and/or a shift left line. For example, a result provided bythe modifier module 583 via the shift right line can increment the bitcounter 581-1 and a result provided by the modifier module 583 via theshift left line can decrement the bit counter 581-1. The bit counter canprovide the current shift amount to the comparator 582 (e.g., A). Thebit counter can be reset via a load line that identifies whether a loadoperation has been performed.

The comparator 582 can receive the current shift amount (e.g., A) and anumber of least significant bits (e.g., B) of a simulated access linenumber. The comparator can determine whether A is less than B or whetherB is less than A. Determining whether A is less than B or whether B isless than A can identify which compute component coupled to a physicalsense line of the physical sense lines that are representing a simulatedsense line is associated with the virtual compute component. Thecomparator can accordingly provide the results of the determination tothe modify module 583.

The modify module 583 can receive an indication that A is less than B orB is less than A. The modify module 583 can also receive an indicationof the type of operation being performed. The modifier module 583 canmodify the results of the comparator such that the content of thecompute components is shifted to a more significant bit (e.g., shiftleft line) and/or a less significant bit (e.g., shift right line) basedon the type of operation being performed in the sensing circuitry 550,the result of the comparator 582, and emulation flag. The type ofoperations being performed can include, among other examples, operationsthat store data to the compute components and/or operations that storedata to memory cells coupled to a physical access line identified by asimulated access line number.

The selector module 585 receives the emulation flag and a number ofleast significant bits from the simulated access line number. Theselector module can identify which of the compute components areassociated with an operation before the content of the computecomponents is shifted in the sensing circuitry 550.

A wait line 587 can request that the controller 140 in FIG. 1 repeat alast operation or to provide a next operation. As such, the wait line587 can be activated (e.g., request to repeat a last operation) if ashift operation is performed, if data stored in the compute componentsis shifted in association with performing an operation, and/or if datais shifted in association with mapping an operation performed in asimulated array to an operation performed in array 530. The sensingcircuitry 550 can also receive a number of other control lines that candefine a number of operations performed in the sensing circuitry 550.

FIG. 5B illustrates a schematic diagram of a portion of a controller inaccordance with a number of embodiments of the present disclosure. FIG.5B includes array 530 and sensing circuitry 550, that are analogous toarray 130, row decoder 146, and sensing circuitry 150 in FIG. 1 andarray 530 and sensing circuitry 550 in FIG. 5A. FIG. 5B also includes anemulation flag, a shift left line, a shift right line, a wait line 587which is analogous to wait line 587 in FIG. 5A and bit counter 581-2.

FIG. 5B shows a schematic diagram for performing a shift operation. Thecircuitry shown in FIG. 5B can be included in controller 140 and/orbetween controller 140 and array 130 in FIG. 1.

The shift left line and/or the shift right line can control a shiftoperation performed in the sensing circuitry 550. The shift left lineand the shift right line can indicate a shift operation towards a MSBand/or a LSB, respectively. The shift left line and/or the shift rightline in FIG. 5B can be coupled to the shift left line and/or the shiftright line in FIG. 5A.

The schematic diagram can map a shift operation performed in a simulatedarray to a shift operation performed in array 530. For example, a shiftoperation performed in a simulated array can include shifting the bitsstored in a simulated compute component once. Mapping the shiftoperation in a simulated array to a shift operation in array 530 caninclude shifting the bits stored in the compute components a pluralityof times. The example provided in FIG. 5B shifts the bits stored in thecompute components a plurality of times via a wait line 587. The waitline 587 indicates to a controller 140 that the last operation shall berepeated. For example, if the wait line 587 is activated, then a lastshift operation is repeated. If the wait line 587 is not activated thena controller 140 can provide a next instruction.

The shift left line and/or the shift right line in FIG. 5B can becontrolled by the controller 140 and/or by the modify module 583. Forexample, the shift left line and/or the shift right line can beactivated independently from the modify module 583. For example, theshift left line can be activated to perform a shift operation towards aMSB and the shift right line can be activated to perform a shiftoperation towards a LSB.

The bit counter 581-2 can be incremented every time that a shift leftline and/or a shift right line is activated. The bit counter 581-2 canbe a two bit counter or a three bit counter, among other types of bitcounters. The bit counter 581-2 may only have increment functionality.The bit counter 581-2 can determine how many times the shift operationis repeated and as such can determine a mapping between a shiftoperation performed on a simulated array and a shift operation performedon array 530. For example, a two bit counter can be used to perform fourshift operations in array 530 for every shift operation performed in asimulate array. A three bit counter can be used to perform a number ofshift operations up to eight shift operations, such as six shiftoperations, in array 530 for every shift operation performed insimulated array.

The bit counter 581-2 can be coupled to a NAND gate to determine when toactivate the wait line 587. The NAND gate can be used to indicate to thecontroller 140 to provide a next operation when the bit counter 581-2provides all 1-bits or to repeat a last operation (e.g., shiftoperation) when the bit counter 581-2 does not provide all 1-bits. Thewait line 587 can be activated when the emulation flag is activated andthe bit counter 581-2 does not output all 1-bits. The bit counter 581-2can map bits to a count. The maximum quantity of 1-bits provided by thebit counter 581-2 can be determined by a type of bit counter that isassociated with bit counter 581-2. For example, if the bit counter 581-2is a two bit counter, then the maximum quantity of 1-bits can be four.If the bit counter 581-2 is a three bit counter, then the maximumquantity of 1-bits can be six. In a number of examples, the bit counter581-2 can be reset every time the wait line 587 indicates to thecontroller 140 that a new operation can be provided.

FIG. 6A illustrates a timing diagram associated with performing a numberof logical operations using sensing circuitry in accordance with anumber of embodiments of the present disclosure. The functionality ofthe sensing circuitry 250-2 of FIG. 2A is described below with respectto performing logical operations and initially storing a result in thecompute component 231-2 (e.g., secondary latch of the accumulator). Thetiming diagram shown in FIG. 6A illustrates signals (e.g., voltagesignals) associated with performing a first operation phase of a logicaloperation (e.g., an R-input logical operation) using the sensingcircuitry illustrated in FIG. 2A. The first operation phase describedwith respect to FIG. 6A can be a first operation phase of an AND, NAND,OR, or NOR operation, for instance. Performing the operation phaseillustrated in FIG. 6A can involve consuming significantly less energy(e.g., about half) than previous processing approaches that may involveproviding a full swing between voltage rails (e.g., between a supply andground for accessing I/O lines).

In the example illustrated in FIG. 6A, the voltage rails correspondingto complementary logic values (e.g., “1” and “0”) are a supply voltage(V_(DD)) and a reference voltage (e.g., ground (Gnd)). Prior toperforming a logical operation, an equilibration can occur such that thecomplementary data lines D and D_(—) are shorted together at anequilibration voltage (V_(DD)/2), as previously described.

The first operation phase of a logical operation described belowinvolves loading a first operand of the logical operation into theaccumulator. The time references (e.g., t₁, etc.) shown in FIG. 6A d₀not necessarily represent a same absolute or relative time as similartime references in other timing diagrams.

At time t₁, the equilibration signal 626 is deactivated, and then aselected row is enabled (e.g., the row corresponding to a memory cellwhose data value is to be sensed and used as a first input). Signal604-0 represents the voltage signal applied to the selected row (e.g.,Row 204-Y shown in FIG. 2A). When row signal 604-0 reaches the thresholdvoltage (Vt) of the access transistor (e.g., 202-3 shown in FIG. 2A)corresponding to the selected cell, the access transistor turns on andcouples the data line D to the selected memory cell (e.g., to thecapacitor 203-3 shown in FIG. 2A if the cell is a 1T1C DRAM cell), whichcreates a differential voltage signal between the data lines D and D_(—)(e.g., as indicated by signals 605-1 and 605-2 on the data lines,respectively) between times t₂ and t₃. The voltage of the selected cellis represented by signal 603. Due to conservation of energy, creatingthe differential signal between data lines D and D_(—) (e.g., bycoupling the cell to data line D) does not consume energy. However, theenergy associated with enabling/disabling the row signal 604-0 isdistributed over the plurality of memory cells coupled to the row.

At time t₃, the sense amplifier (e.g., 206-2 shown in FIG. 2A) isenabled. As shown, a positive control signal 690, e.g., corresponding toACT 265 shown in FIG. 2B, goes high and the negative control signal 628,e.g., corresponding to RnIF 228 shown in FIG. 2B, goes low. Thisamplifies the differential signal between data lines D and D_, resultingin a voltage (e.g., V_(DD)) corresponding to a logic “1” or a voltage(e.g., ground) corresponding to a logic “0” being on data line D (andthe other voltage being on complementary data line D_). As such, thesensed data value is stored in the primary latch of sense amplifier206-2. The primary energy consumption occurs in charging the data line D(205-1) from the equilibration voltage V_(DD)/2 to the rail voltageV_(DD). FIG. 6A shows, in example, the data line voltages 605-1 and605-2 that correspond to a logic “1” being on data line D.

According to some embodiments, the primary latch of sense amplifier206-2 can be coupled to the complementary data lines D and D_(—) throughrespective pass transistors (not shown in FIG. 2A but in a similarconfiguration as the manner in which latch 264 is coupled to the datalines D and D_(—) through load/pass transistors 218-1 and 218-2 shown inFIG. 2A). The PASSD control signal 611 controls one pass transistor. ThePASSDB control signal controls the other pass transistor, and here thePASSDB control signal can behave here the same as the PASSD controlsignal.

At time t₄, the pass transistors (if present) can be enabled (e.g., viarespective PASSD and PASSDB control signals 611 applied to control linescoupled to the respective gates of the pass transistors going high). Attime t₅, the accumulator negative control signal 612-1 (e.g., Accumb)and the accumulator positive control signal 612-2 (e.g., Accum) areactivated via respective control lines 212-1 and 212-2 shown in FIG. 2A.As described below, the accumulator control signals ACCUMB 612-1 andACCUM 612-2 may remain activated for subsequent operation phases. Assuch, in this example, activating the control signals ACCUMB 612-1 andACCUM 612-2 enables the secondary latch (e.g., accumulator) of computecomponent 231-2 shown in FIG. 2A. The sensed data value stored in senseamplifier 206-2 is transferred (e.g., copied) to the secondary latch,including the dynamic latch and static latch 264, as shown in FIG. 2A.

At time t₆, the PASSD control signal 611 (and the PASSDB control signal)goes low thereby turning off the pass transistors (if present). However,since the accumulator control signals ACCUMB 612-1 and ACCUM 612-2remain activated, an accumulated result is stored (e.g., latched) in thesecondary latches (e.g., accumulator). At time t₇, the row signal 604-0is deactivated, and the array sense amplifiers are disabled at time t₈(e.g., sense amplifier control signals 628 and 690 are deactivated).

At time t₉, the data lines D and D_(—) are equilibrated (e.g.,equilibration signal 626 is activated), as illustrated by data linevoltage signals 605-1 and 605-2 moving from their respective rail valuesto the equilibration voltage (V_(DD)/2). The equilibration consumeslittle energy due to the law of conservation of energy. As describedabove in association with FIG. 2B, equilibration can involve shortingthe complementary data lines D and D_(—) together at an equilibrationvoltage, which is V_(DD)/2, in this example. Equilibration can occur,for instance, prior to a memory cell sensing operation.

FIGS. 6B and 6C respectively illustrate timing diagrams associated withperforming a number of logical operations using sensing circuitry inaccordance with a number of embodiments of the present disclosure.Timing diagrams shown in FIGS. 6B and 6C illustrate signals (e.g.,voltage signals) associated with performing a number of intermediateoperation phases of a logical operation (e.g., an R-input logicaloperation). For instance, the timing diagram shown in FIG. 6Bcorresponds to a number of intermediate operation phases of an R-inputNAND operation or an R-input AND operation, and timing diagram shown inFIG. 6C corresponds to a number of intermediate operation phases of anR-input NOR operation or an R-input OR operation. For example,performing an AND or NAND operation can include performing the operationphase shown in FIG. 6B one or more times subsequent to an initialoperation phase such as that described with respect to FIG. 6A.Similarly, performing an OR or NOR operation can include performing theoperation phase shown and described with respect to FIG. 6C one or moretimes subsequent to an initial operation phase such as that describedwith respect to FIG. 6A.

As shown in the timing diagrams illustrated in FIGS. 6B and 6C, at timet₁, equilibration is disabled (e.g., the equilibration signal 626 isdeactivated), and then a selected row is enabled (e.g., the rowcorresponding to a memory cell whose data value is to be sensed and usedas an input such as a second input, third input, etc.). Signal 604-1represents the voltage signal applied to the selected row (e.g., Row204-Y shown in FIG. 2A). When row signal 604-1 reaches the thresholdvoltage (Vt) of the access transistor (e.g., 202-3 shown in FIG. 2A)corresponding to the selected cell, the access transistor turns on andcouples the data line D to the selected memory cell (e.g., to thecapacitor 203-3 if the cell is a 1T1C DRAM cell), which creates adifferential voltage signal between the data lines D and D_(—) (e.g., asindicated by signals 605-1 and 605-2, respectively) between times t₂ andt₃. The voltage of the selected cell is represented by signal 603. Dueto conservation of energy, creating the differential signal between Dand D_(—) (e.g., by coupling the cell to data line D) does not consumeenergy. However, the energy associated with activating/deactivating therow signal 604-1 can be amortized over the plurality of memory cellscoupled to the row.

At time t₃, the sense amplifier (e.g., 206-2 shown in FIG. 2A) isenabled (e.g., a positive control signal 690 (e.g., corresponding to ACT233 shown in FIG. 2B) goes high, and the negative control signal 628(e.g., RnIF 228 shown in FIG. 2B) goes low). This amplifies thedifferential signal between D and D_, resulting in a voltage (e.g.,V_(DD)) corresponding to a logic 1 or a voltage (e.g., ground)corresponding to a logic 0 being on data line D (and the other voltagebeing on complementary data line D_). As such, the sensed data value isstored in the primary latch of sense amplifier 206-2. The primary energyconsumption occurs in charging the data line D (205-1) from theequilibration voltage V_(DD)/2 to the rail voltage V_(DD).

As shown in timing diagrams illustrated in FIGS. 6B and 6C, at time t₄(e.g., after the selected cell is sensed), only one of control signals611-1 (PASSD) shown in FIG. 6B and 611-2 (PASSDB) shown in FIG. 6C isactivated (e.g., only one of pass transistors (if present) is enabled),depending on the particular logic operation. For example, since thetiming diagram illustrated in FIG. 6B corresponds to an intermediatephase of a NAND or AND operation, control signal 611-1 (PASSD) isactivated at time t₄ to turn on the pass transistor coupling the primarylatch to data line D and the PASSDB control signal remains deactivatedleaving the pass transistor coupling the primary latch to data lineD_(—) turned off. Conversely, since the timing diagram illustrated inFIG. 6C corresponds to an intermediate phase of a NOR or OR operation,control signal 611-2 (PASSDB) is activated at time t₄ to turn on thepass transistor coupling the primary latch to data line D_(—) andcontrol signal PASSD remains deactivated leaving the pass transistorcoupling the primary latch to data line D turned off. Recall from abovethat the accumulator control signals 612-1 (Accumb) and 612-2 (Accum)were activated during the initial operation phase described with respectto FIG. 6A, and they remain activated during the intermediate operationphase(s).

Since the accumulator was previously enabled, activating only PASSD(611-1 as shown in FIG. 6B) results in accumulating the data valuecorresponding to the voltage signal 605-1 shown in FIG. 6B correspondingto data line D. Similarly, activating only PASSDB (611-2 as shown inFIG. 6C) results in accumulating the data value corresponding to thevoltage signal 605-2 corresponding to data line D_. For instance, in anexample AND/NAND operation shown in the timing diagram illustrated inFIG. 6B in which only PASSD (611-1) is activated, if the data valuestored in a second selected memory cell is a logic “0,” then theaccumulated value associated with the secondary latch is asserted lowsuch that the secondary latch stores logic “0.” If the data value storedin the second selected memory cell is not a logic “0,” then thesecondary latch retains its stored first selected memory cell data value(e.g., a logic “1” or a logic “0”). As such, in this AND/NAND operationexample, the secondary latch is serving as a zeroes (0s).

Similarly, in an example OR/NOR operation shown in the timing diagramillustrated in FIG. 6C in which only PASSDB 611-2 is activated, if thedata value stored in the second selected memory cell is a logic “1,”then the accumulated value associated with the secondary latch isasserted high such that the secondary latch stores logic “1.” If thedata value stored in the second selected memory cell is not a logic “1,”then the secondary latch retains its stored first selected memory celldata value (e.g., a logic “1” or a logic “0”). As such, in this OR/NORoperation example, the secondary latch is effectively serving as a ones(1s) accumulator since voltage signal 605-2 on D_(—) is setting thetrue, e.g., “1,” data value of the accumulator.

At the conclusion of an intermediate operation phase such as that shownin FIG. 6B or 6C, the PASSD signal 611-1 (e.g., for AND/NAND) or thePASSDB signal 611-2 (e.g., for OR/NOR) is deactivated (e.g., at timet₅), the selected row is disabled (e.g., at time t₆), the senseamplifier is disabled (e.g., at time t₇), and equilibration occurs(e.g., at time t₈). An intermediate operation phase such as thatillustrated in FIG. 6B or 6C can be repeated in order to accumulateresults from a number of additional rows. As an example, the sequence oftiming diagram illustrated in FIGS. 6B and/or 6C can be performed asubsequent (e.g., second) time for a third memory cell, a subsequent(e.g., third) time for a fourth memory cell, etc. For instance, for a10-input NOR operation, the intermediate phase shown in FIG. 6C canoccur 9 times to provide 9 inputs of the 10-input logical operation,with the tenth input being determined during the initial operation phase(e.g., as described with respect to FIG. 6A).

FIG. 6D illustrates a timing diagram associated with performing a numberof logical operations using sensing circuitry in accordance with anumber of embodiments of the present disclosure. The timing diagramillustrated in FIG. 6D shows signals (e.g., voltage signals) associatedwith performing a last operation phase of a logical operation (e.g., anR-input logical operation). For instance, the timing diagram illustratedin FIG. 6D corresponds to a last operation phase of an R-input ANDoperation or an R-input OR operation.

For example, performing a last operation phase of an R-input logicaloperation can include performing the operation phase shown in FIG. 6Dsubsequent to a number of iterations of the intermediate operationphase(s) described in association with FIGS. 6B and/or 6C. Table 2 shownbelow indicates the Figures corresponding to the sequence of operationphases associated with performing a number of R-input logical operationsin accordance with a number of embodiments described herein.

TABLE 2 Operation FIG. 6A FIG. 6B FIG. 6C FIG. 6D AND First phase R-1iterations Last phase NAND First phase R-1 iterations OR First phase R-1iterations Last phase NOR First phase R-1 iterations

A NAND operation can be implemented, for example, by storing the resultof the R-1 iterations for an AND operation in the sense amplifier, theninverting the sense amplifier before conducting the last operation phaseto store the result (described below). A NOR operation can beimplemented, for example, by storing the result of the R-1 iterationsfor an OR operation in the sense amplifier, then inverting the senseamplifier before conducting the last operation phase to store the result(described below).

The last operation phase illustrated in the timing diagram of FIG. 6D isdescribed in association with storing a result of an R-input logicaloperation to a row of the array (e.g., array 230 shown in FIG. 2A).However, as described above, in a number of embodiments, the result canbe stored to a suitable location other than back to the array (e.g., toan external register associated with a controller and/or host processor,to a memory array of a different memory device, etc., via I/O lines).

As shown in timing diagram illustrated in FIG. 6D, at time t₁,equilibration is disabled (e.g., the equilibration signal 626 isdeactivated) such that data lines D and D_(—) are floating. At time t₂,the PASSD control signal 611 (and PASSDB signal) is activated for an ANDor OR operation.

Activating the PASSD control signal 611 (and PASSDB signal) (e.g., inassociation with an AND or OR operation) transfers the accumulatedoutput stored in the secondary latch of compute component 231-2 shown inFIG. 2A to the primary latch of sense amplifier 206-2. For instance, foran AND operation, if any of the memory cells sensed in the prioroperation phases (e.g., the first operation phase illustrated in FIG. 6Aand one or more iterations of the intermediate operation phaseillustrated in FIG. 6B) stored a logic “0” (e.g., if any of the R-inputsof the AND operation were a logic “0”), then the data line D_(—) willcarry a voltage corresponding to logic “1” (e.g., V_(DD)) and data lineD will carry a voltage corresponding to logic “0” (e.g., ground). Forthis AND operation example, if all of the memory cells sensed in theprior operation phases stored a logic “1” (e.g., all of the R-inputs ofthe AND operation were logic “1”), then the data line D_(—) will carry avoltage corresponding to logic “0” and data line D will carry a voltagecorresponding to logic “1”. At time t₃, the primary latch of senseamplifier 206-2 is then enabled (e.g., a positive control signal 690(e.g., corresponding to ACT 265 shown in FIG. 2B) goes high and thenegative control signal 628 (e.g., corresponding to RnIF 228 shown inFIG. 2B) goes low), which amplifies the differential signal between datalines D and D_ such that the data line D now carries the ANDed result ofthe respective input data values as determined from the memory cellssensed during the prior operation phases. As such, data line D will beat ground if any of the input data values are a logic “0” and data lineD will be at V_(DD) if all of the input data values are a logic “1.”

For an OR operation, if any of the memory cells sensed in the prioroperation phases (e.g., the first operation phase of FIG. 6A and one ormore iterations of the intermediate operation phase shown in FIG. 6C)stored a logic “1” (e.g., if any of the R inputs of the OR operationwere a logic “1”), then the data line D_(—) will carry a voltagecorresponding to logic “0” (e.g., ground) and data line D will carry avoltage corresponding to logic “1” (e.g., V_(DD)). For this OR example,if all of the memory cells sensed in the prior operation phases stored alogic “0” (e.g., all of the R inputs of the OR operation were logic“0”), then the data line D will carry a voltage corresponding to logic“0” and data line D_(—) will carry a voltage corresponding to logic “1.”At time t₃, the primary latch of sense amplifier 206-2 is then enabledand the data line D now carries the ORed result of the respective inputdata values as determined from the memory cells sensed during the prioroperation phases. As such, data line D will be at V_(DD) if any of theinput data values are a logic “1” and data line D will be at ground ifall of the input data values are a logic “0”.

The result of the R-input AND or OR logical operations can then bestored back to a memory cell of array 230 shown in FIG. 2A. In theexamples shown in FIG. 6D, the result of the R-input logical operationis stored to a memory cell coupled to the last row enabled (e.g., row ofthe last logical operation operand).

Storing the result of the logical operation to a memory cell simplyinvolves enabling the associated row access transistor by enabling theparticular row. The capacitor of the memory cell will be driven to avoltage corresponding to the data value on the data line D (e.g., logic“1” or logic “0”), which essentially overwrites whatever data value waspreviously stored in the selected memory cell. It is noted that theselected memory cell can be a same memory cell that stored a data valueused as an input for the logical operation. For instance, the result ofthe logical operation can be stored back to a memory cell that stored anoperand of the logical operation.

The timing diagram illustrated in FIG. 6D show, at time t₃, the positivecontrol signal 690 and the negative control signal 628 being deactivated(e.g., signal 690 goes high and signal 628 goes low) to disable thesense amplifier 206-2 shown in FIG. 2A. At time t₄ the PASSD controlsignal 611 (and PASSDB signal) that was activated at time t₂ isdeactivated. Embodiments are not limited to this example. For instance,in a number of embodiments, the sense amplifier 206-2 shown in FIG. 2Amay be enabled subsequent to time t₄ (e.g., after the PASSD controlsignal 611 (and PASSDB signal) are deactivated).

As shown in FIG. 6D, at time t₅, a selected row is enabled (e.g., by rowactivation signal 604 going high, which drives the capacitor of theselected cell to the voltage corresponding to the logic value stored inthe accumulator. At time t₆ the selected row is disabled. At time t₇ thesense amplifier 206-2 shown in FIG. 2A is disabled (e.g., positivecontrol signal 628 and negative control signal 690 are deactivated inFIG. 6D), and at time t₈ equilibration occurs (e.g., signal 626 isactivated and the voltages on the complementary data lines 605-1 (D) and605-2 (D_) are brought to the equilibration voltage, as shown in FIG.6D).

Although the example of performing a last operation phase of an R-inputlogical operation was discussed above with respect to FIG. 6D forperforming AND and OR logical operations, embodiments are not limited tothese logical operations. For example, NAND and NOR operations can alsoinvolve a last operation phase of an R-input logical operation that isstored back to a memory cell of array 230 using control signals tooperate the sensing circuitry illustrated in FIG. 2A.

The functionality of the sensing circuitry 250-2 of FIG. 2A as describedpreviously and summarized once again in Table 1 below with respect toperforming logical operations and initially storing a result in thesense amplifier 206-2. Initially storing the result of a particularlogical operation in the primary latch of sense amplifier 206-2 canprovide improved versatility as compared to previous approaches in whichthe result may initially reside in a secondary latch (e.g., accumulator)of a compute component 231-2, and then be subsequently transferred tothe sense amplifier 206-2, for instance.

Initially storing the result of a particular operation in the senseamplifier 206-2 (e.g., without having to perform an additional operationto move the result from the compute component 231-2 (e.g., accumulator)to the sense amplifier 206-2) is advantageous because, for instance, theresult can be written to a row (of the array of memory cells) or backinto the accumulator without performing a precharge cycle (e.g., on thecomplementary data lines 205-1 (D) and/or 205-2 (D_)).

FIG. 7A illustrates a timing diagram associated with performing a numberof logical operations using sensing circuitry in accordance with anumber of embodiments of the present disclosure. FIG. 7A illustrates atiming diagram associated with initiating an AND logical operation on afirst operand and a second operand. In this example, the first operandis stored in a memory cell coupled to a first access line (e.g., Row X)and the second operand is stored in a memory cell coupled to a secondaccess line (e.g., Row Y). Although the example refers to performing anAND on data stored in cells corresponding to one particular column,embodiments are not so limited. For instance, an entire row of datavalues can be ANDed, in parallel, with a different row of data values.For example, if an array comprises 2,048 columns, then 2,048 ANDoperations could be performed in parallel.

FIG. 7A illustrates a number of control signals associated withoperating sensing circuitry (e.g., 250-2 in FIG. 2A) to perform the ANDlogical operation. “EQ” corresponds to an equilibrate signal applied tothe sense amplifier 206-2, “ROW X” corresponds to an activation signalapplied to access line 204-X, “ROW Y” corresponds to an activationsignal applied to access line 204-Y, “Act” and “RnIF” correspond to arespective active positive and negative control signals applied to thesense amplifier 206-2, “LOAD” corresponds to a load control signal(e.g., LOAD/PASSD and LOAD/PASSDB shown in FIG. 2A), and “AND”corresponds to the AND control signal shown in FIG. 2A. FIG. 7A alsoillustrates the waveform diagrams showing the signals (e.g., voltagesignals) on the digit lines D and D_(—) corresponding to sense amplifier206-2 and on the nodes S1 and S2 corresponding to the compute component231-2 (e.g., accumulator) during an AND logical operation for thevarious data value combinations of the row X and row Y data values(e.g., diagrams correspond to respective data value combinations 00, 10,01, 11). The particular timing diagram waveforms are discussed belowwith respect to the pseudo code associated with an AND operation of thecircuit shown in FIG. 2A.

An example of pseudo code associated with loading (e.g., copying) afirst data value stored in a cell coupled to row 204-X into theaccumulator can be summarized as follows:

Copy Row X into the Accumulator:

-   -   Deactivate EQ    -   Open Row X    -   Fire Sense Amplifiers (after which Row X data resides in the        sense amplifiers)    -   Activate LOAD (sense amplifier data (Row X) is transferred to        nodes S1 and S2 of the Accumulator and resides there        dynamically)    -   Deactivate LOAD    -   Close Row X    -   Precharge

In the pseudo code above, “Deactivate EQ” indicates that anequilibration signal (EQ signal shown in FIG. 7A) corresponding to thesense amplifier 206-2 is disabled at t₁ as shown in FIG. 7A (e.g., suchthat the complementary data lines (e.g., 205-1 (D) and 205-2 (D_) are nolonger shorted to V_(DD)/2). After equilibration is disabled, a selectedrow (e.g., Row X) is enabled (e.g., selected, opened such as byactivating a signal to select a particular row) as indicated by “OpenRow X” in the pseudo code and shown at t₂ for signal ROW X in FIG. 7A.When the voltage signal applied to ROW X reaches the threshold voltage(Vt) of the access transistor (e.g., 202-4) corresponding to theselected cell, the access transistor turns on and couples the data line(e.g., 205-2 (D_)) to the selected cell (e.g., to capacitor 203-4) whichcreates a differential voltage signal between the data lines.

After Row X is enabled, in the pseudo code above, “Fire SenseAmplifiers” indicates that the sense amplifier 206-2 is enabled to setthe primary latch, as has been described herein, and subsequentlydisabled. For example, as shown at t₃ in FIG. 7A, the ACT positivecontrol signal (e.g., 265 shown in FIG. 2B) goes high and the RnIFnegative control signal (e.g., 228 shown in FIG. 2B) goes low, whichamplifies the differential signal between 205-1 (D) and 205-2 (D_),resulting in a voltage (e.g., V_(DD)) corresponding to a logic 1 or avoltage (e.g., GND) corresponding to a logic 0 being on data line 205-1(D). The voltage corresponding to the other logic is placed on thecomplementary data line 205-2 (D_). The sensed data value is stored inthe primary latch of sense amplifier 206-2. The primary energyconsumption occurs in charging the data lines (e.g., 205-1 (D) or 205-2(D_)) from the equilibration voltage V_(DD)/2 to the rail voltageV_(DD).

The four sets of possible sense amplifier and accumulator signalsillustrated in FIG. 7A (e.g., one for each combination of Row X and RowY data values) show the behavior of signals on data lines D and D_. TheRow X data value is stored in the primary latch of the sense amplifier.It should be noted that FIG. 2A shows that the memory cell includingstorage element 203-4, corresponding to Row X, is coupled to thecomplementary data line D_, while the memory cell including storageelement 203-3, corresponding to Row Y, is coupled to data line D.However, as can be seen in FIG. 2A, the charge stored in memory cell201-4 (corresponding to Row X) corresponding to a “0” data value causesthe voltage on data line D_(—) (to which memory cell 201-4 is coupled)to go high and the charge stored in memory cell 201-4 corresponding to a“1” data value causes the voltage on data line D_(—) to go low, which isopposite correspondence between data states and charge stored in memorycell 201-4, corresponding to Row Y, that is coupled to data line D.These differences in storing charge in memory cells coupled to differentdata lines is appropriately accounted for when writing data values tothe respective memory cells.

After firing the sense amplifiers, in the pseudo code above, “ActivateLOAD” indicates that the LOAD control signal goes high as shown at t₄ inFIG. 7A, causing load/pass transistors 218-1 and 218-2 to conduct. Inthis manner, activating the LOAD control signal enables the secondarylatch in the accumulator of the compute component 231-2. The sensed datavalue stored in the sense amplifier 206-2 is transferred (e.g., copied)to the secondary latch. As shown for each of the four sets of possiblesense amplifier and accumulator signals illustrated in FIG. 7A, thebehavior at inputs of the secondary latch of the accumulator indicatesthe secondary latch is loaded with the Row X data value. As shown inFIG. 7A, the secondary latch of the accumulator may flip (e.g., seeaccumulator signals for Row X=“0” and Row Y=“0” and for Row X=“1” andRow Y=“0”), or not flip (e.g., see accumulator signals for Row X=“0” andRow Y=“1” and for Row X=“1” and Row Y=“1”), depending on the data valuepreviously stored in the dynamic latch.

After setting the secondary latch from the data values stored in thesense amplifier (and present on the data lines 205-1 (D) and 205-2 (D_)in FIG. 2A) in the pseudo code above, “Deactivate LOAD” indicates thatthe LOAD control signal goes back low as shown at t₅ in FIG. 7A to causethe load/pass transistors 218-1 and 218-2 to stop conducting and therebyisolate the dynamic latch from the complementary data lines. However,the data value remains dynamically stored in the secondary latch of theaccumulator.

After storing the data value on the secondary latch, the selected row(e.g., Row X) is disabled (e.g., deselected, closed such as bydeactivating a select signal for a particular row (e.g., the ROW Xsignal)) as indicated by “Close Row X” and indicated at t₆ in FIG. 7A,which can be accomplished by the access transistor turning off todecouple the selected cell from the corresponding data line. Once theselected row is closed and the memory cell is isolated from the datalines, the data lines can be precharged as indicated by the “Precharge”in the pseudo code above. A precharge of the data lines can beaccomplished by an equilibrate operation, as indicated in FIG. 7A by theEQ signal going high at t₇. As shown in each of the four sets ofpossible sense amplifier and accumulator signals illustrated in FIG. 7Aat t₇, the equilibrate operation causes the voltage on data lines D andD_(—) to each return to V_(DD)/2. Equilibration can occur, for instance,prior to a memory cell sensing operation or the logical operations(described below).

A subsequent operation phase associated with performing the AND or theOR operation on the first data value (now stored in the sense amplifier206-2 and the secondary latch of the compute component 231-2 shown inFIG. 2A) and the second data value (stored in a memory cell 201-3coupled to Row 204-Y) includes performing particular steps which dependon the whether an AND or an OR is to be performed. Examples of pseudocode associated with “ANDing” and “ORing” the data value residing in theaccumulator (e.g., the first data value stored in the memory cell 201-4coupled to Row X 204-X) and the second data value (e.g., the data valuestored in the memory cell 201-3 coupled to Row Y 204-Y) are summarizedbelow. Example pseudo code associated with “ANDing” the data values caninclude:

Deactivate EQ

Open Row Y

Fire Sense Amplifiers (after which Row Y data resides in the senseamplifiers)

Close Row Y

-   -   The result of the logic operation, in the next operation, will        be placed on the sense amplifier, which will overwrite any row        that is active.    -   Even when Row Y is closed, the sense amplifier still contains        the Row Y data value.

Activate AND

-   -   This results in the sense amplifier being written to the value        of the function (e.g., Row X AND Row Y)    -   If the accumulator contains a “0” (i.e., a voltage corresponding        to a “0” on node S2 and a voltage corresponding to a “1” on node        S1), the sense amplifier data is written to a “0”    -   If the accumulator contains a “1” (i.e., a voltage corresponding        to a “1” on node S2 and a voltage corresponding to a “0” on node        S1), the sense amplifier data remains unchanged (Row Y data)    -   This operation leaves the data in the accumulator unchanged.

Deactivate AND

Precharge

In the pseudo code above, “Deactivate EQ” indicates that anequilibration signal corresponding to the sense amplifier 206-2 isdisabled (e.g., such that the complementary data lines 205-1 (D) and205-2 (D_) are no longer shorted to V_(DD)/2), which is illustrated inFIG. 7A at t₈. After equilibration is disabled, a selected row (e.g.,Row Y) is enabled as indicated in the pseudo code above by “Open Row Y”and shown in FIG. 7A at t₉. When the voltage signal applied to ROW Yreaches the threshold voltage (Vt) of the access transistor (e.g.,202-3) corresponding to the selected cell, the access transistor turnson and couples the data line (e.g., D_(—) 205-2) to the selected cell(e.g., to capacitor 203-3) which creates a differential voltage signalbetween the data lines.

After Row Y is enabled, in the pseudo code above, “Fire SenseAmplifiers” indicates that the sense amplifier 206-2 is enabled toamplify the differential signal between 205-1 (D) and 205-2 (D_),resulting in a voltage (e.g., V_(DD)) corresponding to a logic “1” or avoltage (e.g., GND) corresponding to a logic “0” being on data line205-1 (D). The voltage corresponding to the other logic state is oncomplementary data line 205-2 (D_). As shown at t₁₀ in FIG. 7A, the ACTpositive control signal (e.g., 265 shown in FIG. 2B) goes high and theRnIF negative control signal (e.g., 228 shown in FIG. 2B) goes low tofire the sense amplifiers. The sensed data value from memory cell 201-3is stored in the primary latch of sense amplifier 206-2, as previouslydescribed. The secondary latch still corresponds to the data value frommemory cell 201-4 since the dynamic latch is unchanged.

After the second data value sensed from the memory cell 201-3 coupled toRow Y is stored in the primary latch of sense amplifier 206-2, in thepseudo code above, “Close Row Y” indicates that the selected row selectsignal (e.g., ROW Y) can be disabled if it is not desired to store theresult of the AND logical operation back in the memory cellcorresponding to Row Y. However, FIG. 7A shows that ROW Y is leftenabled such that the result of the logical operation can be stored backin the memory cell corresponding to Row Y. Isolating the memory cellcorresponding to Row Y can be accomplished by the access transistorturning off to decouple the selected cell 201-3 from the data line 205-1(D).

After the selected Row Y is configured (e.g., to isolate the memory cellor not isolate the memory cell), “Activate AND” in the pseudo code aboveindicates that the AND control signal goes high as shown in FIG. 7A att₁₁, causing pass transistor 207-1 to conduct. In this manner,activating the AND control signal causes the value of the function(e.g., Row X AND Row Y) to be written to the sense amplifier.

With the first data value (e.g., Row X) stored in the dynamic latch ofthe accumulator 231-2 and the second data value (e.g., Row Y) stored inthe sense amplifier 206-2, if the dynamic latch of the compute component231-2 contains a “0” (i.e., a voltage corresponding to a “0” on node S2and a voltage corresponding to a “1” on node S1), a “0” is stored in thesense amplifier (regardless of the data value previously stored in thesense amplifier). This is because the voltage corresponding to a “1” onnode S1 causes transistor 209-1 to conduct thereby coupling the senseamplifier 206-2 to ground through transistor 209-1, pass transistor207-1 and data line 205-1 (D). When either data value of an ANDoperation is “0,” the result is a “0.” Here, when the second data value(in the dynamic latch) is a “0,” the result of the AND operation is a“0” regardless of the state of the first data value. Thus, theconfiguration of the sensing circuitry causes the “0” result to bewritten and initially stored in the sense amplifier 206-2. Thisoperation leaves the data value in the accumulator unchanged (e.g., fromRow X).

If the secondary latch of the accumulator contains a “1” (e.g., from RowX), then the result of the AND operation depends on the data valuestored in the sense amplifier 206-2 (e.g., from Row Y). The result ofthe AND operation should be a “1” if the data value stored in the senseamplifier 206-2 (e.g., from Row Y) is also a “1,” but the result of theAND operation should be a “0” if the data value stored in the senseamplifier 206-2 (e.g., from Row Y) is a “0.” The sensing circuitry 250-2is configured such that if the dynamic latch of the accumulator containsa “1” (i.e., a voltage corresponding to a “1” on node S2 and a voltagecorresponding to a “0” on node S1), transistor 209-1 does not conduct,the sense amplifier is not coupled to ground (as described above), andthe data value previously stored in the sense amplifier 206-2 remainsunchanged (e.g., Row Y data value so the AND operation result is a “1”if the Row Y data value is a “1” and the AND operation result is a “0”if the Row Y data value is a “0”). This operation leaves the data valuein the accumulator unchanged (e.g., from Row X).

After the result of the AND operation is initially stored in the senseamplifier 206-2, “Deactivate AND” in the pseudo code above indicatesthat the AND control signal goes low as shown at t₁₂ in FIG. 7A, causingpass transistor 207-1 to stop conducting to isolate the sense amplifier206-2 (and data line 205-1 (D)) from ground. If not previously done, RowY can be closed (as shown at t₁₃ in FIG. 7A) and the sense amplifier canbe disabled (as shown at t₁₄ in FIG. 7A by the ACT positive controlsignal going low and the RnIF negative control signal going high). Withthe data lines isolated, “Precharge” in the pseudo code above can causea precharge of the data lines by an equilibrate operation, as describedpreviously (e.g., commencing at t₁₄ shown in FIG. 7A).

FIG. 7A shows, in the alternative, the behavior of voltage signals onthe data lines (e.g., 205-1 (D) and 205-2 (D_) shown in FIG. 2A) coupledto the sense amplifier (e.g., 206-2 shown in FIG. 2A) and the behaviorof voltage signals on nodes S1 and S1 of the secondary latch of thecompute component (e.g., 231-2 shown in FIG. 2A) for an AND logicaloperation involving each of the possible combinations of operands (e.g.,Row X/Row Y data values 00, 10, 01, and 11).

Although the timing diagrams illustrated in FIG. 7A and the pseudo codedescribed above indicate initiating the AND logical operation afterstarting to load the second operand (e.g., Row Y data value) into thesense amplifier, the circuit shown in FIG. 2A can be successfullyoperated by initiating the AND logical operation before starting to loadthe second operand (e.g., Row Y data value) into the sense amplifier.

FIG. 7B illustrates a timing diagram associated with performing a numberof logical operations using sensing circuitry in accordance with anumber of embodiments of the present disclosure. FIG. 7B illustrates atiming diagram associated with initiating an OR logical operation afterstarting to load the second operand (e.g., Row Y data value) into thesense amplifier. FIG. 7B illustrates the sense amplifier and accumulatorsignals for various combinations of first and second operand datavalues. The particular timing diagram signals are discussed below withrespect to the pseudo code associated with an AND logical operation ofthe circuit shown in FIG. 2A.

A subsequent operation phase can alternately be associated withperforming the OR operation on the first data value (now stored in thesense amplifier 206-2 and the secondary latch of the compute component231-2) and the second data value (stored in a memory cell 201-3 coupledto Row Y 204-Y). The operations to load the Row X data into the senseamplifier and accumulator that were previously described with respect totimes t₁-t₇ shown in FIG. 7A are not repeated with respect to FIG. 7B.Example pseudo code associated with “ORing” the data values can include:

Deactivate EQ

Open Row Y

Fire Sense Amplifiers (after which Row Y data resides in the senseamplifiers)

Close Row Y

-   -   When Row Y is closed, the sense amplifier still contains the Row        Y data value.

Activate OR

-   -   This results in the sense amplifier being written to the value        of the function (e.g., Row X OR Row Y), which may overwrite the        data value from Row Y previously stored in the sense amplifier        as follows:    -   If the accumulator contains a “0” (i.e., a voltage corresponding        to a “0” on node S2 and a voltage corresponding to a “1” on node        S1), the sense amplifier data remains unchanged (Row Y data)    -   If the accumulator contains a “1” (i.e., a voltage corresponding        to a “1” on node S2 and a voltage corresponding to a “0” on node        S1), the sense amplifier data is written to a “1”    -   This operation leaves the data in the accumulator unchanged.

Deactivate OR

Precharge

The “Deactivate EQ” (shown at t₈ in FIG. 7B), “Open Row Y” (shown at t₉in FIG. 7B), “Fire Sense Amplifiers” (shown at t₁₀ in FIG. 7B), and“Close Row Y” (shown at t₁₃ in FIG. 7B, and which may occur prior toinitiating the particular logical function control signal), shown in thepseudo code above, indicate the same functionality as previouslydescribed with respect to the AND operation pseudo code. Once theconfiguration of selected Row Y is appropriately configured (e.g.,enabled if a logical operation result is to be stored in a memory cellcorresponding to Row Y or closed to isolate a memory cell if a logicaloperation result is not to be stored in memory cell corresponding to RowY), “Activate OR” in the pseudo code above indicates that the OR controlsignal goes high as shown at t₁₁ in FIG. 7B, which causes passtransistor 207-2 to conduct. In this manner, activating the OR controlsignal causes the value of the function (e.g., Row X OR Row Y) to bewritten to the sense amplifier.

With the first data value (e.g., Row X) stored in the secondary latch ofthe compute component 231-2 and the second data value (e.g., Row Y)stored in the sense amplifier 206-2, if the dynamic latch of theaccumulator contains a “0” (i.e., a voltage corresponding to a “0” onnode S2 and a voltage corresponding to a “1” on node S1), then theresult of the OR operation depends on the data value stored in the senseamplifier 206-2 (e.g., from Row Y). The result of the OR operationshould be a “1” if the data value stored in the sense amplifier 206-2(e.g., from Row Y) is a “1,” but the result of the OR operation shouldbe a “0” if the data value stored in the sense amplifier 206-2 (e.g.,from Row Y) is also a “0.” The sensing circuitry 250-2 is configuredsuch that if the dynamic latch of the accumulator contains a “0,” withthe voltage corresponding to a “0” on node S2, transistor 209-2 is offand does not conduct (and pass transistor 207-1 is also off since theAND control signal is not asserted) so the sense amplifier 206-2 is notcoupled to ground (either side), and the data value previously stored inthe sense amplifier 206-2 remains unchanged (e.g., Row Y data value suchthat the OR operation result is a “1” if the Row Y data value is a “1”and the OR operation result is a “0” if the Row Y data value is a “0”).

If the dynamic latch of the accumulator contains a “1” (i.e., a voltagecorresponding to a “1” on node S2 and a voltage corresponding to a “0”on node S1), transistor 209-2 does conduct (as does pass transistor207-2 since the OR control signal is asserted), and the sense amplifier206-2 input coupled to data line 205-2 (D_) is coupled to ground sincethe voltage corresponding to a “1” on node S2 causes transistor 209-2 toconduct along with pass transistor 207-2 (which also conducts since theOR control signal is asserted). In this manner, a “1” is initiallystored in the sense amplifier 206-2 as a result of the OR operation whenthe secondary latch of the accumulator contains a “1” regardless of thedata value previously stored in the sense amplifier. This operationleaves the data in the accumulator unchanged. FIG. 7B shows, in thealternative, the behavior of voltage signals on the data lines (e.g.,205-1 (D) and 205-2 (D_) shown in FIG. 2A) coupled to the senseamplifier (e.g., 206-2 shown in FIG. 2A) and the behavior of voltagesignals on nodes S1 and S2 of the secondary latch of the computecomponent 231-2 for an OR logical operation involving each of thepossible combinations of operands (e.g., Row X/Row Y data values 00, 10,01, and 11).

After the result of the OR operation is initially stored in the senseamplifier 206-2, “Deactivate OR” in the pseudo code above indicates thatthe OR control signal goes low as shown at t₁₂ in FIG. 7B, causing passtransistor 207-2 to stop conducting to isolate the sense amplifier 206-2(and data line D 205-2) from ground. If not previously done, Row Y canbe closed (as shown at t₁₃ in FIG. 7B) and the sense amplifier can bedisabled (as shown at t₁₄ in FIG. 4 by the ACT positive control signalgoing low and the RnIF negative control signal going high). With thedata lines isolated, “Precharge” in the pseudo code above can cause aprecharge of the data lines by an equilibrate operation, as describedpreviously and shown at t₁₄ in FIG. 7B.

The sensing circuitry 250-2 illustrated in FIG. 2A can provideadditional logical operations flexibility as follows. By substitutingoperation of the ANDinv control signal for operation of the AND controlsignal, and/or substituting operation of the ORinv control signal foroperation of the OR control signal in the AND and OR operationsdescribed above, the logical operations can be changed from {Row X ANDRow Y} to {˜Row X AND Row Y} (where “˜Row X” indicates an opposite ofthe Row X data value, e.g., NOT Row X) and can be changed from {Row X ORRow Y} to {˜Row X OR Row Y}. For example, during an AND operationinvolving the inverted data values, the ANDinv control signal can beasserted instead of the AND control signal, and during an OR operationinvolving the inverted data values, the ORinv control signal can beasserted instead of the OR control signal. Activating the ORinv controlsignal causes transistor 214-2 to conduct and activating the ANDinvcontrol signal causes transistor 214-1 to conduct. In each case,asserting the appropriate inverted control signal can flip the senseamplifier and cause the result initially stored in the sense amplifier206-2 to be that of the AND operation using the inverted Row X and trueRow Y data values or that of the OR operation using the inverted Row Xand true Row Y data values. A true or complement version of one datavalue can be used in the accumulator to perform a logical operation(e.g., AND, OR), for example, by loading a data value to be invertedfirst and a data value that is not to be inverted second.

In a similar approach to that described above with respect to invertingthe data values for the AND and OR operations described above, thesensing circuitry shown in FIG. 2A can perform a NOT (e.g., invert)operation by putting the non-inverted data value into the dynamic latchof the accumulator and using that data to invert the data value in thesense amplifier 206-2. As previously mentioned, activating the ORinvcontrol signal causes transistor 214-2 to conduct and activating theANDinv control signal causes transistor 214-1 to conduct. The ORinvand/or ANDinv control signals are used in implementing the NOT function,as described in the pseudo code below:

Copy Row X into the Accumulator:

-   -   Deactivate EQ    -   Open Row X    -   Fire Sense Amplifiers (after which Row X data resides in the        sense amplifiers)    -   Activate LOAD (sense amplifier data (Row X) is transferred to        nodes S1 and S2 of the Accumulator and resides there dynamically    -   Deactivate LOAD    -   Activate ANDinv and ORinv (which puts the complement data value        on the data lines)        This results in the data value in the sense amplifier being        inverted (e.g., the sense amplifier latch is flipped)    -   This operation leaves the data in the accumulator unchanged

Deactivate ANDinv and ORinv

Close Row X

Precharge

The “Deactivate EQ,” “Open Row X,” “Fire Sense Amplifiers,” “ActivateLOAD,” and “Deactivate LOAD” operations shown in the pseudo code aboveindicate the same functionality as the same operations in the pseudocode for the “Copy Row X into the Accumulator” initial operation phasedescribed above for the AND operation and OR operation. However, ratherthan closing the Row X and precharging after the Row X data is loadedinto the sense amplifier 206-2 and copied into the dynamic latch, acomplement version of the data value in the dynamic latch of theaccumulator can be placed on the data line and thus transferred to thesense amplifier 206-2. This is done by enabling (e.g., causing atransistor to conduct and disabling the invert transistors (e.g., ANDinvand ORinv). This results in the sense amplifier 206-2 being flipped fromthe true data value that was previously stored in the sense amplifier toa complement data value (e.g., inverted data value) being stored in thesense amplifier. As such, a true or complement version of the data valuein the accumulator can be transferred to the sense amplifier based uponactivating or not activating ANDinv and/or ORinv. This operation leavesthe data in the accumulator unchanged.

Because the sensing circuitry 250-2 shown in FIG. 2A initially storesthe result of the AND, OR, and/or NOT logical operations in the senseamplifier 206-2 (e.g., on the sense amplifier nodes), these logicaloperation results can be communicated easily and quickly to any enabledrow, any row activated after the logical operation is complete, and/orinto the secondary latch of the compute component 231-2. The senseamplifier 206-2 and sequencing for the AND, OR, and/or NOT logicaloperations can also be interchanged by appropriate firing of the AND,OR, ANDinv, and/or ORinv control signals (and operation of correspondingtransistors having a gate coupled to the particular control signal)before the sense amplifier 206-2 fires.

When performing logical operations in this manner, the sense amplifier206-2 can be pre-seeded with a data value from the dynamic latch of theaccumulator to reduce overall current utilized because the senseamplifiers 206-2 are not at full rail voltages (e.g., supply voltage orground/reference voltage) when the accumulator function is copied to thesense amplifier 206-2. An operation sequence with a pre-seeded senseamplifier 206-2 either forces one of the data lines to the referencevoltage (leaving the complementary data line at V_(DD)/2, or leaves thecomplementary data lines unchanged. The sense amplifier 206-2 pulls therespective data lines to full rails when the sense amplifier 206-2fires. Using this sequence of operations will overwrite data in anenabled row.

A SHIFT operation can be accomplished by multiplexing (“muxing”) twoneighboring data line complementary pairs using a DRAM isolation (ISO)scheme. According to embodiments of the present disclosure, the shiftcircuitry 223 can be used for shifting data values stored in memorycells coupled by a particular pair of complementary data lines to thesensing circuitry 250-2 (e.g., sense amplifier 206-2) corresponding to adifferent pair of complementary data lines (e.g., such as a senseamplifier 206-2 corresponding to a left or right adjacent pair ofcomplementary data lines). As used herein, a sense amplifier 206-2corresponds to the pair of complementary data lines to which the senseamplifier is coupled when isolation transistors 221-1 and 221-2 areconducting. The SHIFT operations (right or left) do not pre-copy the RowX data value into the accumulator. Operations to shift right Row X canbe summarized by the following pseudo code:

Deactivate Norm and Activate Shift

Deactivate EQ

Open Row X

Fire Sense Amplifiers (after which shifted Row X data resides in thesense amplifiers)

Activate Norm and Deactivate Shift

Close Row X

Precharge

In the pseudo code above, “Deactivate Norm and Activate Shift” indicatesthat a NORM control signal goes low causing isolation transistors 221-1and 221-2 of the shift circuitry 223 to not conduct (e.g., isolate thesense amplifier from the corresponding pair of complementary datalines). The SHIFT control signal goes high causing isolation transistors221-3 and 221-4 to conduct, thereby coupling the sense amplifier 206-3to the left adjacent pair of complementary data lines (e.g., on thememory array side of non-conducting isolation transistors 221-1 and221-2 for the left adjacent pair of complementary data lines).

After the shift circuitry 223 is configured, the “Deactivate EQ,” “OpenRow X,” and “Fire Sense Amplifiers” operations shown in the pseudo codeabove indicate the same functionality as the same operations in thepseudo code for the “Copy Row X into the Accumulator” initial operationphase described above prior to pseudo code for the AND operation and ORoperation. After these operations, the Row X data value for the memorycell coupled to the left adjacent pair of complementary data lines isshifted right and stored in the sense amplifier 206-3.

In the pseudo code above, “Activate Norm and Deactivate Shift” indicatesthat a NORM control signal goes high causing isolation transistors 221-1and 221-2 of the shift circuitry 223 to conduct (e.g., coupling thesense amplifier to the corresponding pair of complementary data lines),and a SHIFT control signal goes low causing isolation transistors 221-3and 221-4 to not conduct and isolating the sense amplifier 206-3 fromthe left adjacent pair of complementary data lines (e.g., on the memoryarray side of non-conducting isolation transistors 221-1 and 221-2 forthe left adjacent pair of complementary data lines). Since Row X isstill active, the Row X data value that has been shifted right istransferred to Row X of the corresponding pair of complementary datalines through isolation transistors 221-1 and 221-2.

After the Row X data values are shifted right to the corresponding pairof complementary data lines, the selected row (e.g., ROW X) is disabledas indicated by “Close Row X” in the pseudo code above, which can beaccomplished by the access transistor turning off to decouple theselected cell from the corresponding data line. Once the selected row isclosed and the memory cell is isolated from the data lines, the datalines can be precharged as indicated by the “Precharge” in the pseudocode above. A precharge of the data lines can be accomplished by anequilibrate operation, as described above.

Operations to shift left Row X can be summarized as follows:

Activate Norm and Deactivate Shift

Deactivate EQ

Open Row X

Fire Sense Amplifiers (after which Row X data resides in the senseamplifiers)

Deactivate Norm and Activate Shift

-   -   Sense amplifier data (shifted left Row X) is transferred to Row        X    -   Close Row X    -   Precharge

In the pseudo code above, “Activate Norm and Deactivate Shift” indicatesthat a NORM control signal goes high causing isolation transistors 221-1and 221-2 of the shift circuitry 223 to conduct, and the SHIFT controlsignal goes low causing isolation transistors 221-3 and 221-4 to notconduct. This configuration couples the sense amplifier 206-2 to acorresponding pair of complementary data lines and isolates the senseamplifier from the right adjacent pair of complementary data lines.

After the shift circuitry is configured, the “Deactivate EQ,” “Open RowX,” and “Fire Sense Amplifiers” operations shown in the pseudo codeabove indicate the same functionality as the same operations in thepseudo code for the “Copy Row X into the Accumulator” initial operationphase described above prior to pseudo code for the AND operation and ORoperation. After these operations, the Row X data value for the memorycell coupled to the pair of complementary data lines corresponding tothe sense circuitry 250-2 is stored in the sense amplifier 206-2.

In the pseudo code above, “Deactivate Norm and Activate Shift” indicatesthat a NORM control signal goes low causing isolation transistors 221-1and 221-2 of the shift circuitry 223 to not conduct (e.g., isolate thesense amplifier from the corresponding pair of complementary datalines), and the SHIFT control signal goes high causing isolationtransistors 221-3 and 221-4 to conduct coupling the sense amplifier tothe left adjacent pair of complementary data lines (e.g., on the memoryarray side of non-conducting isolation transistors 221-1 and 221-2 forthe left adjacent pair of complementary data lines. Since Row X is stillactive, the Row X data value that has been shifted left is transferredto Row X of the left adjacent pair of complementary data lines.

After the Row X data values are shifted left to the left adjacent pairof complementary data lines, the selected row (e.g., ROW X) is disabledas indicated by “Close Row X,” which can be accomplished by the accesstransistor turning off to decouple the selected cell from thecorresponding data line. Once the selected row is closed and the memorycell is isolated from the data lines, the data lines can be prechargedas indicated by the “Precharge” in the pseudo code above. A precharge ofthe data lines can be accomplished by an equilibrate operation, asdescribed above.

According to various embodiments, general computing can be enabled in amemory array core of a processor-in-memory (PIM) device such as a DRAMone transistor per memory cell (e.g., 1T1C) configuration at 6F² or 4F²memory cell sizes, for example. The advantage of the apparatuses andmethods described herein is not realized in terms of single instructionspeed, but rather the cumulative speed that can be achieved by an entirebank of data being computed in parallel without ever transferring dataout of the memory array (e.g., DRAM) or firing a column decode. In otherwords, data transfer time can be eliminated. For example, the apparatusof the present disclosure can perform ANDS or ORs in parallel, e.g.,concurrently, using data values in memory cells coupled to a word line(e.g., a row of 16,384 memory cells).

In previous approach sensing circuits where data is moved out forlogical operation processing (e.g., using 32 or 64 bit registers), feweroperations can be performed in parallel compared to the apparatus of thepresent disclosure. In this manner, significantly higher throughput iseffectively provided in contrast to conventional configurationsinvolving an off pitch processing unit discrete from the memory suchthat data must be transferred there between. An apparatus and/or methodsaccording to the present disclosure can also use less energy/area thanconfigurations where the logical operation is discrete from the memory.Furthermore, an apparatus and/or methods of the present disclosure canprovide additional energy/area advantages since the in-memory-arraylogical operations eliminate certain data value transfers.

1.-20. (canceled)
 21. A method comprising: receiving a first bit-vectorand a second bit-vector in a format associated with storing the firstbit-vector in memory cells coupled to a first access line and a firstnumber of sense lines and storing the second bit-vector in memory cellscoupled to the first access line and a second number of sense lines,wherein each of the memory cells of the first number of sense lines areseparated from another memory cell of the first number of sense lines byat least one memory cell of the second number of sense lines; mergingthe first bit-vector and the second bit vector into a format associatedwith storing the first bit-vector in a number of memory cells coupled tothe first access line and a third number of sense lines and storing thesecond bit-vector in a number of memory cells coupled to a second accessline and the third number of sense lines; and performing an operation onthe first bit-vector and the second bit-vector.
 22. The method of claim21, wherein each of the memory cells of the third number of sense linesare adjacent to another of the memory cells of the third number of senselines.
 23. The method of claim 21, wherein performing the operationcomprises performing at least one of a number of AND operations, ORoperations, SHIFT operations, INVERT operations, and XOR operationswithout a sense line address access.
 24. The method of claim 23, whereinperforming the at least one of the number of AND, OR, SHIFT, INVERT, XORoperations comprises performing the at least one of the number of AND,OR, SHIFT, INVERT, XOR operations using sensing circuitries coupled torespective columns of complementary sense lines, and wherein each of thesensing circuitries includes a sense amplifier comprising a primarylatch and a compute component comprises a secondary latch.
 25. Themethod of claim 21, wherein the format corresponds to a logicalorganization of the first access line and the third number of senselines and the second access line and the third number of sense lines.26. The method of claim 25, wherein storing the first bit-vector in anumber of physical memory cells coupled to the first access line and thefirst number of sense lines comprises modifying the format associatedwith physical storing of the first bit-vector and logically storing thefirst bit-vector in a number of memory cells coupled to the first accessline and the third number of sense lines.
 27. The method of claim 21,wherein performing the operation on the first bit-vector and the secondbit-vector comprises performing, in parallel, logical operations betweenrespective bits of the first bit-vector and the second bit-vector. 28.The method of claim 21, further comprising storing at least a portion ofthe first bit-vector in the number of physical memory cells that arecoupled to the first access line and a first, third, fifth, and seventhordered sense lines of the number of sense lines.
 29. The method ofclaim 28, further comprising storing the second bit-vector in the numberof memory cells coupled to the first access line and a second, fourth,sixth, and eighth ordered sense lines of the number of sense lines. 30.The method of claim 28, wherein the method includes storing the firstbit-vector in physical memory cells that are each separated from anotherof the memory cells storing the first bit-vector by each of the memorycells storing the second bit-vector.
 31. The method of claim 21, furthercomprising storing at least a portion of the first bit-vector in thenumber of physical memory cells that are coupled to the first accessline and a first, second, fifth, and sixth ordered sense lines of thenumber of sense lines.
 32. The method of claim 31, further comprisingstoring the second bit-vector in the number of memory cells coupled tothe first access line and a third, fourth, seventh, and eighth orderedsense lines of the number of sense lines.
 33. The method of claim 21,further comprising: receiving a third bit-vector in a format associatedwith storing the third bit-vector in memory cells coupled to a secondaccess line and the first number of sense lines; and merging the thirdbit-vector in memory cells coupled to a third access line and the firstnumber of sense lines.
 34. An apparatus comprising: a first group ofmemory cells coupled to a first access line and a number of first senselines in a memory array and configured to store a first bit-vector; asecond group of memory cells coupled to the first access line and anumber of second sense lines in the memory array and configured to storea second bit-vector; and a controller configured to operate the sensingcircuitry to: logically merge each respective memory cell of the numberof second sense lines to be aligned with sensing circuitry of arespective memory cell of the number of first sense lines; and performan operation on the first bit-vector and the second bit-vector.
 35. Theapparatus of claim 34, wherein a bit width of the second bit-vector isless than a quantity of memory cells coupled to the first access line.36. The apparatus of claim 34, wherein performing the operationcomprises performing the operation on a first bit of the firstbit-vector stored in a memory cell coupled to the first access line anda first of the number of first sense lines and a first bit of the secondbit-vector logically merged to be associated with a correspondingsensing circuitry coupled to the first of the number of first senselines.
 37. A method, comprising: mapping each respective bit of a firstbit-vector to each respective bit of a second bit-vector; wherein: thefirst bit-vector is stored in a first group of memory cells coupled to anumber of first sense lines and to an access line of a memory array; andthe second bit-vector is stored in a second group of memory cellscoupled to a number of second sense lines and the access line of thememory array; performing an operation on: the first bit-vector; and thesecond bit-vector; wherein the operation is performed using sensingcircuitry comprising transistors formed on pitch with the memory cellsof the memory array.
 38. The method of claim 37, wherein mappingcomprises shifting the first bit-vector from sensing circuitry coupledto the number of first sense lines to sensing circuitry coupled to thenumber of second sense lines.
 39. The method of claim 38, wherein aquantity of the number of first sense lines is a power of two and thequantity of the number of second sense lines is a power of two.
 40. Themethod of claim 38, wherein the first bit-vector is shifted a quantityof bit positions that is associated with a quantity of the number offirst sense lines and a quantity of the number of second sense lines.